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EMB4

更新时间: 2024-02-14 13:19:25
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体数字晶体管
页数 文件大小 规格书
1页 306K
描述
General purpose transistors (dual digital transistors)

EMB4 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

EMB4 数据手册

  
EMB4  
General purpose transistors (dual digital transistors)  
FEATURES  
SOT-563  
z
Two DTA114T chips in a package  
Marking: B4  
(3)  
(2)  
(1)  
1
Equivalent circuit  
R1  
R1  
(4)  
(5)  
(6)  
Absolute maximum ratings (Ta=25)  
Symbol  
Parameter  
Value  
-50  
Units  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-50  
V
-5  
V
-100  
150  
mA  
mW  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
150  
Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)CBO IC=-50μA, IE=0  
V(BR)CEO IC=-1mA, IB=0  
V(BR)EBO IE=-50μA, IC=0  
V
V
V
ICBO  
IEBO  
hFE  
VCB=-50V, IE=0  
VEB=-4V, IC=0  
-0.5  
-0.5  
600  
-0.3  
μA  
μA  
DC current gain  
VCE=-5V, IC=-1mA  
IC=-10mA, IB=-1mA  
VCE=-10V, IC=-5mA, f=100MHz  
-
100  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
MHz  
250  
Intput resistance  
R1  
7
13  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05