Datasheet > EMB4

EMB4

更新时间： 2024-11-20 10:11:31

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描述
General purpose transistors (dual digital transistors)

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中文翻译

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EMB4 数据手册

EMB4

General purpose transistors (dual digital transistors)

FEATURES

SOT-563

Two DTA114T chips in a package

Marking: B4

(3)

(2)

(1)

Equivalent circuit

(4)

(5)

(6)

Absolute maximum ratings (T_a=25℃)

Symbol

Parameter

Value

-50

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-50

-5

-100

150

℃

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature

T_J

150

T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-50

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBOI_C=-50μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-50μA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=-50V, I_E=0

V_EB=-4V, I_C=0

-0.5

600

-0.3

μA

DC current gain

V_CE=-5V, I_C=-1mA

I_C=-10mA, I_B=-1mA

V_CE=-10V, I_C=-5mA, f=100MHz

100

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

Ω

250

Intput resistance

R₁

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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