Datasheet > EMB32C03V

EMB32C03V

更新时间： 2024-09-25 17:15:27

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
9页	889K
描述
EDFN3X3

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中文翻译

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数据手册

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EMB32C03V 数据手册

EMB32C03V

N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N-CH

30V

P-CH

-30V

BVDSS

32mΩ

45mΩ

55mΩ

85mΩ

-5A

R_{DSON (MAX.)}@V_GS=10V

R_{DSON (MAX.)}@V_GS=4.5V

I_D@T_A=25°C

N+P Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate-Source Voltage

V_GS

N-CH

±20

P-CH

±20

-5

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 100 °C

-3

Pulsed Drain Current¹

I_DM

I_AS

-20

Avalanche Current

L = 0.1mH

Avalanche Energy

E_AS

E_AR

Repetitive Avalanche Energy²

L = 0.05Mh

T_A= 25 °C

T_A= 100 °C

5.6

2.3

0.9

Power Dissipation

P_D

°C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

7.5

°C / W

Junction-to-Ambient³

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³55°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/7/31

p.1

12 3 4 5 6 7...9

中文翻译

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