5秒后页面跳转
EMB36N10A PDF预览

EMB36N10A

更新时间: 2024-09-25 17:15:47
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 844K
描述
TO252-2

EMB36N10A 数据手册

 浏览型号EMB36N10A的Datasheet PDF文件第2页浏览型号EMB36N10A的Datasheet PDF文件第3页浏览型号EMB36N10A的Datasheet PDF文件第4页浏览型号EMB36N10A的Datasheet PDF文件第5页浏览型号EMB36N10A的Datasheet PDF文件第6页 
EMB36N10A  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
100V  
36mΩ  
30A  
RDSON (MAX.)  
ID  
N Channel MOSFET  
UIS, Rg 100% Tested  
Pb-Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
30  
UNIT  
Gate-Source Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
20  
A
Pulsed Drain Current1  
IDM  
IAS  
100  
30  
Avalanche Current  
Avalanche Energy  
L = 0.1mH  
L = 0.05mH  
TC = 25 °C  
TC = 100 °C  
EAS  
EAR  
45  
mJ  
Repetitive Avalanche Energy2  
22.5  
50  
Power Dissipation  
PD  
W
°C  
20  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
Junction-to-Case  
2.5  
50  
°C / W  
Junction-to-Ambient  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
2019/3/3  
p.1  

与EMB36N10A相关器件

型号 品牌 获取价格 描述 数据表
EMB37N06A EXCELLIANCE

获取价格

TO252-2
EMB39P06A EXCELLIANCE

获取价格

TO252-2
EMB39P06CS EXCELLIANCE

获取价格

TO251S-3
EMB3FHAT2R ROHM

获取价格

Small Signal Bipolar Transistor,
EMB3T2R ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6
EMB4 ROHM

获取价格

General purpose (dual digital transistors)
EMB4 HTSEMI

获取价格

General purpose transistors (dual digital transistors)
EMB4 CJ

获取价格

Small Signal Bipolar Transistor
EMB4 CJ

获取价格

SOT-563
EMB40P04G EXCELLIANCE

获取价格

SOP-8