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EMB3

更新时间: 2024-02-25 10:06:48
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体数字晶体管
页数 文件大小 规格书
1页 348K
描述
DIGITAL TRANSISTOR (PNP+ PNP)

EMB3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):100
JESD-609代码:e2元件数量:2
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)晶体管元件材料:SILICON
Base Number Matches:1

EMB3 数据手册

  
EMB3  
DIGITAL TRANSISTOR (PNP+ PNP)  
SOT-563  
FEATURES  
z
z
z
Two DTA143T chips in a package  
Transistor elements are independent, eliminating interference.  
Mounting cost and area can be cut in half.  
1
External circuit  
MARKING: B3  
Absolute maximum ratings(Ta=25)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IC  
Limits  
-50  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-50  
V
-5  
V
-100  
150  
mA  
mW  
Collector Power dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
150  
Tstg  
-55~150  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
V(BR)CBO  
Min.  
Typ  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
-50  
-50  
-5  
IC=-50μA  
Collector-emitter breakdown voltage V(BR)CEO  
V
IC=-1mA  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)EBO  
ICBO  
IEBO  
VCE(sat)  
hFE  
V
IE=-50μA  
-0.5  
-0.5  
-0.3  
600  
6.11  
μA VCB=-50V  
μA VEB=-4V  
Collector-emitter saturation voltage  
DC current transfer ratio  
Input resistance  
V
IC=-5mA,IB=-2.5mA  
VCE=-5V,IC=-1mA  
100  
R1  
3.29  
4.7  
KΩ  
Transition frequency  
fT  
250  
MHz  
VCE=10V ,IE=-5mA,f=100MHz  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05