Datasheet > EMB3

EMB3

更新时间： 2023-12-06 20:11:28

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	574K
描述
SOT-563

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中文翻译

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数据手册

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EMB3 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

Dual Digital Transistors (PNP+PNP)

EMB3

SOT-563

FEATURES

Two DTA143T chips in a package

Transistor elements are independent, eliminating interference

Mounting cost and area can be cut in half

MARKING: B3

Absolute maximum ratings(Ta=25℃)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C

Limits

-50

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

-50

-5

-100

150

Collector Power dissipation

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_(BR)CBO

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

-50

-5

I_C=-50μA

I_C=-1mA

I_E=-50μA

Collector-emitter breakdown voltage V_(BR)CEO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)EBO

I_CBO

I_EBO

V_CE(sat)

h_FE

-0.5

-0.3

600

6.11

μA

V_CB=-50V

μA V_EB=-4V

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

I_C=-5mA,I_B=-2.5mA

V_CE=-5V,I_C=-1mA

100

R₁

3.29

4.7

KΩ

Transition frequency

f_T

250

MHz V_CE=10V ,I_E=-5mA,f=100MHz

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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