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EMB3 PDF预览

EMB3

更新时间: 2024-01-09 21:25:53
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
2页 60K
描述
General purpose (dual digital transistors)

EMB3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):100
JESD-609代码:e2元件数量:2
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)晶体管元件材料:SILICON
Base Number Matches:1

EMB3 数据手册

 浏览型号EMB3的Datasheet PDF文件第2页 
EMB3 / UMB3N / IMB3A  
Transistors  
General purpose (dual digital transistors)  
EMB3 / UMB3N / IMB3A  
!External dimensions (Units : mm)  
!Features  
1) Two DTA143T chips in a EMT or UMT or SMT  
package.  
EMB3, UMB3N  
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
3) Transistor elements are independent, eliminating  
interference.  
1.25  
2.1  
0.1Min.  
!Structure  
Each lead has same dimensions  
Dual PNP digital transistor  
(each with single built in resistor)  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol: B3  
IMB3A  
The following characteristics apply to both DTr1 and DTr2.  
1.6  
2.8  
!Equivalent circuit  
EMB3, UMB3N  
IMB3A  
(4) (5) (6)  
R1  
(3) (2) (1)  
0.3to0.6  
R1  
DTr  
1
DTr1  
Each lead has same dimensions  
Abbreviated symbol: B3  
DTr2  
DTr2  
R1  
R1  
ROHM : SMT6  
EIAJ : SC-74  
(4) (5) (6)  
(3) (2) (1)  
R1=4.7kΩ  
R1=4.7kΩ  
!Packaging specifications  
Package  
Taping  
TN  
Code  
T2R  
T110  
3000  
Type  
Basic ordering unit (pieces)  
8000  
3000  
EMB3  
UMB3N  
IMB3N  
!Absolute maximum ratings (Ta = 25°C)  
Limits  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Unit  
50  
V
V
50  
5  
V
100  
mA  
1
2
EMB3,UMB3N  
IMB3A  
150 (TOTAL)  
300 (TOTAL)  
150  
Collector power  
dissipation  
mW  
PC  
Tj  
°C  
°C  
Junction temperature  
Storage temperature  
Tstg  
55~+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.