Datasheet > EMB28P06V

EMB28P06V

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	430K
描述
EDFN3X3

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EMB28P06V 数据手册

EMB28P06V

Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary:

▪ Pin Description:

P-CH

-60V

BVDSS

R_{DSON (MAX.)}@V_GS=-10V

R_{DSON (MAX.)}@V_GS=-4.5V

I_D@T_C=25℃

25mΩ

33mΩ

-33A

Single P Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

▪ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

V_GS

LIMITS

UNIT

±20

-33

Gate-Source Voltage

T_C= 25 °C

I_D

T_C= 100 °C

T_A= 25 °C

-21

Continuous Drain Current¹

-7

T_A= 70 °C

Pulsed Drain Current¹

-5

-53

I_DM

I_AS

E_AS

E_AR

Avalanche Current¹

-45

Avalanche Energy¹

L = 0.1mH

101

50.6

41.7

16.7

2.1

Repetitive Avalanche Energy²

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

Power Dissipation¹

P_D

T_A= 25 °C

T_A= 70 °C

P_D

Power Dissipation

1.3

-55 to 150

Operating Junction & Storage Temperature Range

T_j, T_stg

℃

▪100% UIS testing in condition of VD=-30V, L=0.1mH, VG=10V, IL=28A, Rated VDS=-60V P-CH

▪THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient³

°C / W

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≦ 1％

³60°C / W when mounted on a 1 in²pad of 2 oz copper.

2020/11/12

A.2

P.1

12 3 4 5 6 7

中文翻译

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