Datasheet > EMB28P03L

EMB28P03L

更新时间： 2024-11-19 17:15:15

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	562K
描述
DFN3.0X2.0-08

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EMB28P03L 数据手册

EMB28P03L

Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary:

▪ Pin Description:

P-CH

-30V

BVDSS

R_{DSON (MAX.)}@V_GS=-10V

R_{DSON (MAX.)}@V_GS=-4.5V

I_D@T_A=25℃

26.0mΩ

34.0mΩ

-5.0A

Single P Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

▪ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

UNIT

V_GS

I_D

±25

-10

-6

-5

-4

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current

I_D

Continuous Drain Current

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AS

-40

-14

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

9.8

4.9

4.2

1.7

2.5

1.6

EAS

EAR

Repetitive Avalanche Energy²

P_D

Power Dissipation

P_D

Power Dissipation

°C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

▪THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient³

SYMBOL

TYPICAL

MAXIMUM

UNIT

R_θJC

R_θJA

t≦10s

Steady-State

°C/W

¹Pulse width limited by maximum junction temperature.

²Duty cycle < 1％

³The power dissipation P_Dis based on T_J(MAX)=150°C, using ≦10s junction-to-ambient thermal resistance.

⁴The value of R_θJAis measured with mounted on a 1 in²pad of 2 oz copper.

2020/7/28

A.1

P.1

12 3 4 5 6 7

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