Datasheet > EMB08K04HP

EMB08K04HP

更新时间： 2024-11-07 17:15:31

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
9页	280K
描述
EDFN5X6

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中文翻译

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数据手册

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EMB08K04HP 数据手册

EMB08K04HP

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N‐CH‐Q1 N‐CH‐Q2

D2 / S1

BVDSS

40V

17mΩ

41A

8mΩ

57A

DSON (MAX.)

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PIN 1

(G1)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

±20

Gate‐Source Voltage

V_GS

±20

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current

I_D

9.6

114

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AS

L = 0.1mH, R

L = 0.05mH

T_C= 25 °C

G=25Ω

Avalanche Energy

E_AS

E_AR

Repetitive Avalanche Energy²

22.5

Power Dissipation

P_D

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

2.01

1.2

2.08

1.3

P_D

°C

Operating Junction & Storage Temperature Range

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

T_j, T_stg

‐55 to 150

SYMBOL

Steady State

TYPICAL

MAXIMUM

2.6

UNIT

Junction‐to‐Case

1.8

R_JC

R_JA

Junction‐to‐Ambient³

Steady State

°C / W

t ≦ 10 s

¹Pulse width limited by maximum junction temperature.

2015/9/3

p.1

12 3 4 5 6 7...9

中文翻译

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