Datasheet > EMB10

EMB10

更新时间： 2024-11-17 22:30:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	74K
描述
General purpose (dual digital transistors)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EMB10 数据手册

EMB10 / UMB10N / IMB10A

Transistors

General purpose

(dual digital transistors)

EMB10 / UMB10N / IMB10A

zExternal dimensions (Unit : mm)

zFeatures

1) Two DTA123J chips in a EMT or UMT or SMT

package.

EMB10

( )

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent, eliminating

interference.

1.2

1.6

Each lead has same dimensions

4) Mounting cost and area can be cut in half.

ROHM : EMT6 Abbreviated symbol : B10

UMB10N

zStructure

Epitaxial planar type

PNP silicon transistor (Built-in resistor type)

1.25

2.1

The following characteristics apply to both DTr1 and

DTr2.

0.1Min.

Each lead has same dimensions

zEquivalent circuit

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : B10

EMB10 / UMB10N

IMB10A

(4) (5) (6)

IMB10A

(3) (2) (1)

DTr

DTr1

DTr2

1=2.2kΩ

R1=2.2kΩ

R2=47kΩ

(3) (2) (1)

(4) (5) (6)

1.6

2.8

0.3to0.6

zAbsolute maximum ratings (Ta = 25°C)

Limits

Parameter

Symbol

Unit

Each lead has same dimensions

Supply voltage

VCC

−50

−12

ROHM : SMT6

EIAJ : SC-74

Abbreviated symbol : B10

Input voltage

VIN

−100

Output current

C (Max.)

−100

EMB10, UMB10N

150 (TOTAL)

300 (TOTAL)

150

Power

dissipation

mW ^∗

IMB10A

∗

Junction temperature

Storage temperature

˚C

Tstg

−55 to +150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

Rev.A

1/2

12 3

中文翻译

下载PDF

与EMB10相关器件

型号	品牌	获取价格	描述	数据表
EMB10FHAT2R	ROHM	获取价格	Small Signal Bipolar Transistor,
EMB10T2R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6
EMB11	HTSEMI	获取价格	dual digital transistors (PNP PNP)
EMB11	ROHM	获取价格	General purpose (dual digital transistors)
EMB11	CJ	获取价格	SOT-563
EMB11A03G	EXCELLIANCE	获取价格	SOP-8
EMB11T2R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6
EMB12B03H	EXCELLIANCE	获取价格	EDFN5X6
EMB12N03G	EXCELLIANCE	获取价格	SOP-8
EMB12N03HR	EXCELLIANCE	获取价格	EDFN5X6