Datasheet > EMB11

EMB11

更新时间： 2024-11-18 12:50:15

品牌	Logo	应用领域
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描述
dual digital transistors (PNP PNP)

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中文翻译

获取价格

数据手册

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EMB11 数据手册

EMB11

dual digital transistors (PNP+PNP)

SOT-563

FEATURES

Two DTA114E chips in a package

Mounting possible with SOT-563 automatic mounting machines

Transistor elements are independent,eliminating interference

Mouting cost and area be cut in half

Marking: B11

Equivalent circuit

Absolute maximum ratings (T_a=25℃)

Symbol

V_CC

I_C(MAX)

V_i

Parameter

Supply Voltage

Value

-50

Units

Output current

-100

Input voltage

-40 to +10

150

P_D

Power dissipation

Junction temperature

Storage temperature

T_J

150

℃

T_stg

-55~+150

℃

Electrical Characteristics (T_a=25℃)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Input turn-on voltage

Input cut-off voltage

Output voltage

V_i(on)

V_i(off)

V_O(on)

I_i

V_O=-0.3V, I_O=-10 mA

_CC=-5V, I_O=-100µA

-3

-0.5

-0.3

I_O=-10 mA, I_i=-0.5 mA

V_i=-5V

Input cut-off current

Output cut-off current

DC current gain

-0.88

-0.5

µA

I_O(off)

G_i

V_CC=-50V, V_i=0

V_O=-5V, I_O=-5mA

V_O=-10V, I_O=-5mA, f =100MHz

Transition frequency

Input resistance

f_T

250

MHz

R₁

KΩ

Resistance ratio

R_2/R₁

0.8

1.2

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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