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EMB12P03H PDF预览

EMB12P03H

更新时间: 2024-10-31 17:15:39
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 205K
描述
EDFN5X6

EMB12P03H 数据手册

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EMB12P03H  
PChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
30V  
12mΩ  
50A  
R
DSON (MAX.)  
G
ID  
S
UIS, Rg 100% Tested  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
50  
UNIT  
GateSource Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
36  
A
Pulsed Drain Current1  
IDM  
IAS  
120  
20  
Avalanche Current  
L = 0.1mH, I  
D=20A, RG=25Ω  
Avalanche Energy  
Power Dissipation  
EAS  
20  
mJ  
W
TC = 25 °C  
50  
PD  
TC = 100 °C  
20  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
2.5  
50  
°C / W  
JunctiontoAmbient3  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
350°C / W when mounted on a 1 in2 pad of 2 oz copper.  
2013/6/21  
p.1  

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