Datasheet > EMB11A03G

EMB11A03G

更新时间： 2024-11-19 17:15:35

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	870K
描述
SOP-8

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EMB11A03G 数据手册

EMB11A03G

Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

RDSON (MAX.)

30V

11mΩ

10A

Dual N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate-Source Voltage

V_GS

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

Avalanche Current

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_A= 25 °C

T_A= 100 °C

E_AS

E_AR

26.45

13.23

Repetitive Avalanche Energy²

Power Dissipation

P_D

°C

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

°C / W

Junction-to-Ambient³

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³62.5°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/2/23

p.1

12 3 4 5 6 7

中文翻译

下载PDF

与EMB11A03G相关器件

型号	品牌	获取价格	描述	数据表
EMB11T2R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6
EMB12B03H	EXCELLIANCE	获取价格	EDFN5X6
EMB12N03G	EXCELLIANCE	获取价格	SOP-8
EMB12N03HR	EXCELLIANCE	获取价格	EDFN5X6
EMB12N03V	EXCELLIANCE	获取价格	EDFN3X3
EMB12N04A	EXCELLIANCE	获取价格	TO252-2
EMB12N04G	EXCELLIANCE	获取价格	SOP-8
EMB12N04V	EXCELLIANCE	获取价格	EDFN3X3
EMB12N10A	EXCELLIANCE	获取价格	TO252-2
EMB12N10CL	EXCELLIANCE	获取价格	TO251L-3