Datasheet > EMB12N10CL

EMB12N10CL

更新时间： 2024-12-01 17:15:39

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	396K
描述
TO251L-3

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EMB12N10CL 数据手册

EMB12N10CL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

100V

12mΩ

15mΩ

68A

R_{DSON (MAX.)}@V_GS=10V

R_{DSON (MAX.)}@V_GS=4.5V

ID @T_C=25°C

Single N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

150

Avalanche Current

L = 0.1mH

Avalanche Energy

E_AS

E_AR

16.2

8.1

Repetitive Avalanche Energy²

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

Power Dissipation

P_D

°C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

1.4

°C / W

Junction-to-Ambient

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³62.5°C / W when mounted on a 1 in2 pad of 2 oz copper.

2019/4/16

p.1

12 3 4 5 6 7

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