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EMB12N04G PDF预览

EMB12N04G

更新时间: 2024-09-16 17:15:31
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杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
5页 176K
描述
SOP-8

EMB12N04G 数据手册

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EMB12N04G  
NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
40V  
12mΩ  
12A  
R
DSON (MAX.)  
ID  
G
S
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
12  
UNIT  
GateSource Voltage  
VGS  
V
TA = 25 °C  
Continuous Drain Current  
ID  
TA = 70 °C  
10  
A
Pulsed Drain Current1  
IDM  
48  
TA = 25 °C  
2.5  
Power Dissipation  
PD  
W
°C  
TA = 70 °C  
1.6  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
JunctiontoAmbient3  
25  
50  
°C / W  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
350°C / W when mounted on a 1 in2 pad of 2 oz copper.  
2015/5/8  
p.1