EMB10 / UMB10N / IMB10A
EMB10FHA / UMB10NFHA / IMB10AFRA
Datasheet
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
AEC-Q101 Qualified
lOutline
EMT6
UMT6
Parameter
VCC
Tr1 and Tr2
-50V
-100mA
2.2kW
(6)
(6)
(5)
(5)
(4)
(4)
(1)
(1)
(2)
(2)
IC(MAX.)
R1
(3)
(3)
EMB10
UMB10N
UMB10NFHA
EMB10FHA
R2
(SC-107C)
47kW
SOT-353 (SC-88)
SMT6
(4)
(5)
lFeatures
(6)
(3)
(2)
(1)
1) Built-In Biasing Resistors.
2) Two DTA123J chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
IMB10A
IMB10AFRA
SOT-457 (SC-74)
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
lInner circuit
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
EMB10 / UMB10N
EMB10FHA / UMB10NFHA
IMB10AFRA
IMB10A
OUT
(6)
IN
(5)
GND
(4)
OUT
(4)
IN
(5)
GND
(6)
lApplication
(1)
GND
(2)
IN
(3)
OUT
(3)
GND
(2)
IN
(1)
OUT
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Package
size
(mm)
Basic
ordering
unit (pcs)
Taping
code
Reel size Tape width
Part No.
Package
Marking
(mm)
(mm)
EMB10
EMT6
UMT6
SMT6
1616
2021
2928
T2R
TR
180
180
180
8
8
8
8,000
3,000
3,000
B10
B10
B10
EMB10FHA
UMB10N
UMB10NFHA
IMB10A
IMB10AFRA
T108
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.D
1/7