Datasheet > EMB11

EMB11

更新时间： 2024-09-14 22:30:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	75K
描述
General purpose (dual digital transistors)

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中文翻译

获取价格

数据手册

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EMB11 数据手册

EMB11 / UMB11N / IMB11A

Transistors

General purpose

(dual digital transistors)

EMB11 / UMB11N / IMB11A

zFeatures

zExternal dimensions (Unit : mm)

1) Two DTA114E chips in a EMT or UMT or SMT

package.

EMB11

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent, eliminating

interference.

( )

1.2

1.6

4) Mounting cost and area can be cut in half.

Each lead has same dimensions

ROHM : EMT6

UMB11N

Abbreviated symbol : B11

zStructure

Epitaxial planar type

PNP silicon transistor (Built-in resistor type)

1.25

2.1

The following characteristics apply to both DTr1 and

DTr2.

0.1Min.

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : B11

zEquivalent circuit

IMB11A

EMB11 / UMB11N

IMB11A

(4) (5) (6)

(3) (2) (1)

DTr

DTr1

DTr2

=10kΩ

1.6

2.8

(3) (2) (1)

(4) (5) (6)

0.3to0.6

Each lead has same dimensions

ROHM : SMT6

EIAJ : SC-74

zAbsolute maximum ratings (Ta = 25°C)

Abbreviated symbol : B11

Parameter

Supply voltage

Symbol

Limits

−50

Unit

VCC

−40

Input voltage

VIN

−50

Output current

C (Max.)

−100

EMB11, UMB11N

150 (TOTAL)

300 (TOTAL)

150

Power

dissipation

mW ^∗

IMB11A

∗

Junction temperature

Storage temperature

˚C

Tstg

−55 to +150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

Rev.A

1/2

12 3

中文翻译

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