Datasheet > EMB09N03V

EMB09N03V

更新时间： 2024-09-16 17:15:27

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	446K
描述
EDFN3X3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EMB09N03V 数据手册

EMB09N03V

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary:

▪ Pin Description:

N-CH

30V

BVDSS

R_{DSON (MAX.)}@V_GS=10V

R_{DSON (MAX.)}@V_GS=4.5V

I_D@T_C=25℃

9.0mΩ

13.5mΩ

44A

Single N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

▪ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

±20

Gate-Source Voltage

T_C= 25 °C

V_GS

Continuous Drain Current¹

T_A= 25 °C

I_D

T_C= 100 °C

Pulsed Drain Current¹

127

I_DM

I_AS

E_AS

E_AR

Avalanche Current^1,4

Avalanche Energy^1,4

L = 0.1mH

39.2

19.6

83.3

33.3

2.3

Repetitive Avalanche Energy^2,4

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

Power Dissipation¹

P_D

T_A= 25 °C

T_A= 100 °C

Power Dissipation¹

P_D

0.9

-55 to 150

Operating Junction & Storage Temperature Range

T_j, T_stg

℃

▪THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

R_θJC

R_θJA

1.5

Junction-to-Case

Junction-to-Ambient³

°C / W

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≦ 1％

³55°C / W when mounted on a 1 in²pad of 2 oz copper.

⁴Guarantee by Engineering test

2020/3/2

A.2

P.1

12 3 4 5 6 7

中文翻译

下载PDF

与EMB09N03V相关器件

型号	品牌	获取价格	描述	数据表
EMB09N03VAT	EXCELLIANCE	获取价格	TDFN2.0X2.0-06
EMB09P03A	EXCELLIANCE	获取价格	TO252-2
EMB09P03H	EXCELLIANCE	获取价格	EDFN5X6
EMB09P03V	EXCELLIANCE	获取价格	EDFN3X3
EMB1	YANGJIE	获取价格	SOT-563
EMB10	ROHM	获取价格	General purpose (dual digital transistors)
EMB10FHAT2R	ROHM	获取价格	Small Signal Bipolar Transistor,
EMB10T2R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6
EMB11	HTSEMI	获取价格	dual digital transistors (PNP PNP)
EMB11	ROHM	获取价格	General purpose (dual digital transistors)