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EMB09N03V PDF预览

EMB09N03V

更新时间: 2024-11-02 17:15:27
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
7页 446K
描述
EDFN3X3

EMB09N03V 数据手册

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EMB09N03V  
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor  
▪Product Summary:  
▪ Pin Description:  
N-CH  
30V  
BVDSS  
RDSON (MAX.)@VGS=10V  
RDSON (MAX.)@VGS=4.5V  
ID @TC=25  
9.0mΩ  
13.5mΩ  
44A  
Single N Channel MOSFET  
UIS, Rg 100% Tested  
Pb-Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
UNIT  
±20  
44  
Gate-Source Voltage  
TC = 25 °C  
VGS  
V
Continuous Drain Current1  
TA = 25 °C  
ID  
12  
TC = 100 °C  
Pulsed Drain Current1  
44  
A
127  
IDM  
IAS  
EAS  
EAR  
Avalanche Current1,4  
28  
Avalanche Energy1,4  
L = 0.1mH  
39.2  
19.6  
83.3  
33.3  
2.3  
mJ  
W
Repetitive Avalanche Energy2,4  
L = 0.05mH  
TC = 25 °C  
TC = 100 °C  
Power Dissipation1  
PD  
TA = 25 °C  
TA = 100 °C  
Power Dissipation1  
PD  
W
0.9  
-55 to 150  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
▪THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
TYPICAL  
MAXIMUM  
UNIT  
RθJC  
RθJA  
1.5  
55  
Junction-to-Case  
Junction-to-Ambient3  
°C / W  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
355°C / W when mounted on a 1 in2 pad of 2 oz copper.  
4Guarantee by Engineering test  
2020/3/2  
A.2  
P.1  

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