Datasheet > EMB09N03V

EMB09N03V

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	446K
描述
EDFN3X3

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中文翻译

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EMB09N03V 数据手册

EMB09N03V

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary:

▪ Pin Description:

N-CH

30V

BVDSS

R_{DSON (MAX.)}@V_GS=10V

R_{DSON (MAX.)}@V_GS=4.5V

I_D@T_C=25℃

9.0mΩ

13.5mΩ

44A

Single N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

▪ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

±20

Gate-Source Voltage

T_C= 25 °C

V_GS

Continuous Drain Current¹

T_A= 25 °C

I_D

T_C= 100 °C

Pulsed Drain Current¹

127

I_DM

I_AS

E_AS

E_AR

Avalanche Current^1,4

Avalanche Energy^1,4

L = 0.1mH

39.2

19.6

83.3

33.3

2.3

Repetitive Avalanche Energy^2,4

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

Power Dissipation¹

P_D

T_A= 25 °C

T_A= 100 °C

Power Dissipation¹

P_D

0.9

-55 to 150

Operating Junction & Storage Temperature Range

T_j, T_stg

℃

▪THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

R_θJC

R_θJA

1.5

Junction-to-Case

Junction-to-Ambient³

°C / W

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≦ 1％

³55°C / W when mounted on a 1 in²pad of 2 oz copper.

⁴Guarantee by Engineering test

2020/3/2

A.2

P.1

12 3 4 5 6 7

中文翻译

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