Datasheet > EMB09P03H

EMB09P03H

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	417K
描述
EDFN5X6

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EMB09P03H 数据手册

EMB09P03H

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

-30V

9.5mΩ

17mΩ

-59A

RDSON (MAX.) @V_GS=-10V

RDSON (MAX.) @V_GS=-4.5V

ID@T_C=25°C

Single P Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±25

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

-59

Continuous Drain Current

I_D

T_A= 25 °C(t≦10s)

-20

-13

-37

-184

-53

140

T_A= 25 °C(Steady-State)

T_C= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

Avalanche Current

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

Avalanche Energy

Power Dissipation

E_AS

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

100% UIS testing in condition of V_D=-15V, L=0.1mH, V_G=-10V, I_L=-15A, Rated V_DS=-30V P-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

Junction-to-Ambient³

2.5

°C / W

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³50°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/6/19

p.1

12 3 4 5 6 7

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