Datasheet > EMB09A03VP

EMB09A03VP

更新时间： 2024-11-21 17:15:47

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
10页	968K
描述
DFN3X3

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中文翻译

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数据手册

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EMB09A03VP 数据手册

EMB09A03VP

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N-CH-Q1 N-CH-Q2

VDSS

30V

9mΩ

16A

9mΩ

16A

RDSON (MAX.)

N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

±20

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AS

L = 0.1mH, RG=25Ω

L = 0.05mH

Avalanche Energy

E_AS

E_AR

12.8

6.4

12.8

6.4

Repetitive Avalanche Energy²

T_C= 25 °C

Power Dissipation

P_D

°C

T_C= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

Steady State

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

R_JC

R_JA

Junction-to-Ambient

Steady State

°C / W

t ≦ 10 s

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

R_JAwhen mounted on a 1 in²pad of 2 oz copper.

2019/03/01

p.1

12 3 4 5 6 7...10

中文翻译

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