Datasheet > EMB09K03VP

EMB09K03VP

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
9页	668K
描述
EDFN3X3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EMB09K03VP 数据手册

EMB09K03VP

Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary:

▪ Pin Description:

30V

BVDSS

R_{DSON (MAX.)}@V_GS=10V

R_{DSON (MAX.)}@V_GS=4.5V

I_D@T_C=25℃

20.0mΩ

30.0mΩ 15.0mΩ

32.0A

8.0A

9.0mΩ

49.0A

13.0A

I_D@T_A=25℃

Dual N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

▪ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Gate-Source Voltage

LIMITS

UNIT

±20

V_GS

I_D

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current

I_D

Continuous Drain Current

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AS

127

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

EAS

EAR

12.8

6.4

35.7

14.3

2.5

1.6

22.1

11.0

35.7

14.3

2.5

1.6

Repetitive Avalanche Energy²

P_D

Power Dissipation

P_D

Power Dissipation

°C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

▪THERMAL RESISTANCE RATINGS

MAXIMUM

THERMAL RESISTANCE

SYMBOL

TYPICAL

UNIT

3.5

R_θJC

R_θJA

Junction-to-Case

t≦10s

Steady-State

°C/W

Junction-to-Ambient³

¹Pulse width limited by maximum junction temperature.

²Duty cycle < 1％

³90°C / W when mounted on a 1 in²pad of 2 oz copper.

⁴Guarantee by Engineering test

2021/8/10

A.1

P.1

12 3 4 5 6 7...9

中文翻译

下载PDF

与EMB09K03VP相关器件

型号	品牌	获取价格	描述	数据表
EMB09N03A	EXCELLIANCE	获取价格	TO252-2
EMB09N03CS	EXCELLIANCE	获取价格	TO251S-3
EMB09N03G	EXCELLIANCE	获取价格	SOP-8
EMB09N03H	EXCELLIANCE	获取价格	EDFN5X6
EMB09N03HR	EXCELLIANCE	获取价格	EDFN5X6
EMB09N03V	EXCELLIANCE	获取价格	EDFN3X3
EMB09N03VAT	EXCELLIANCE	获取价格	TDFN2.0X2.0-06
EMB09P03A	EXCELLIANCE	获取价格	TO252-2
EMB09P03H	EXCELLIANCE	获取价格	EDFN5X6
EMB09P03V	EXCELLIANCE	获取价格	EDFN3X3