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EMB09A03HP PDF预览

EMB09A03HP

更新时间: 2022-02-26 12:37:14
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
9页 293K
描述
N‐Channel Logic Level Enhancement Mode Field Effect Transistor

EMB09A03HP 数据手册

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EMB09A3HP  
NChannel Logic Level Enhancement Mode Field Effect Transistor  
S2  
S2  
S2  
G2  
Product Summary:  
NCHQ1 NCHQ2  
D2 / S1  
BVDSS  
30V  
30V  
9.5mΩ  
15A  
9.5mΩ  
15A  
R
DSON (MAX.)  
D1  
ID  
PIN 1  
(G1)  
D1  
D1  
D1  
UIS, Rg 100% Tested  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
UNIT  
Q1  
±20  
15  
Q2  
±20  
15  
GateSource Voltage  
VGS  
V
A
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
12  
12  
Pulsed Drain Current1  
Avalanche Current  
IDM  
IAS  
60  
60  
15  
15  
L = 0.1mH, R  
L = 0.05mH  
TC = 25 °C  
G=25Ω  
Avalanche Energy  
EAS  
EAR  
11.25  
5.62  
48  
11.25  
5.62  
69  
mJ  
Repetitive Avalanche Energy2  
Power Dissipation  
PD  
W
°C  
TC = 100 °C  
25  
36  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
Steady State  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
2.6  
1.8  
60  
25  
RJC  
RJA  
RJA  
JunctiontoAmbient  
Steady State  
62  
27  
°C / W  
t 10 s  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
RJA when mounted on a 1 in2 pad of 2 oz copper.  
2013/11/21  
p.1  

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