Datasheet > EMB08N06G

EMB08N06G

更新时间： 2024-11-10 17:15:39

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	360K
描述
SOP-8

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中文翻译

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EMB08N06G 数据手册

EMB08N06G

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

RDSON (MAX.)

60V

8mΩ

14A

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate-Source Voltage

V_GS

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 70 °C

Pulsed Drain Current^1,3

I_DM

I_AS

Avalanche Current

L = 0.1mH, ID=14A, RG=25Ω

L = 0.05mH

Avalanche Energy

E_AS

E_AR

9.8

4.9

2.5

Repetitive Avalanche Energy²

T_A= 25 °C

Power Dissipation

P_D

°C

T_A= 70 °C

1.6

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

°C / W

Junction-to-Ambient³

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³50°C / W when mounted on a 1 in²pad of 2 oz copper.

2017/2/14

p.1

12 3 4 5 6

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