Datasheet > EMB08N06VS

EMB08N06VS

更新时间： 2024-11-07 17:15:27

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	852K
描述
EDFN3X3

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中文翻译

获取价格

数据手册

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EMB08N06VS 数据手册

EMB08N06VS

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

60V

8.0mΩ

40A

RDSON (MAX.)

N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current¹

T_A= 25 °C

I_D

T_A= 70 °C

Pulsed Drain Current²

I_DM

I_AS

120

Avalanche Current

L = 0.1mH, I_AS=20A, RG=25Ω

L = 0.05mH

Avalanche Energy

E_AS

E_AR

Repetitive Avalanche Energy³

T_C= 25 °C

Power Dissipation

P_D

T_C= 100 °C

T_A= 25 °C

2.5

P_D

°C

T_A= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

°C / W

Junction-to-Ambient

¹Package limited.

R_JA

²Pulse width limited by maximum junction temperature.

³Duty cycle  1％

2019/06/21

p.1

12 3 4 5 6

中文翻译

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