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EMB08N06CS PDF预览

EMB08N06CS

更新时间: 2024-11-19 17:15:19
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
5页 314K
描述
TO251S-3

EMB08N06CS 数据手册

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EMB08N06CS  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
RDSON (MAX.)  
ID  
60V  
8mΩ  
60A  
G
S
UIS, Rg 100% Tested  
Pb-Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
60  
UNIT  
Gate-Source Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
35  
A
Pulsed Drain Current1,3  
IDM  
IAS  
170  
60  
Avalanche Current  
L = 0.1mH, ID=60A, RG=25Ω  
L = 0.05mH  
Avalanche Energy  
EAS  
EAR  
180  
90  
mJ  
Repetitive Avalanche Energy2  
TC = 25 °C  
50  
Power Dissipation  
PD  
W
°C  
TC = 100 °C  
20  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=30A, Rated VDS=60V N-CH  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
Junction-to-Case  
Junction-to-Ambient  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
2.5  
75  
°C / W  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
3Pulsed drain current rating is package limited.  
2017/3/23  
p.1  

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