Datasheet > EMB07P03A

EMB07P03A

更新时间： 2024-09-16 17:15:19

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
5页	189K
描述
TO252-2

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EMB07P03A 数据手册

EMB07P03A

P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

RDSON (MAX.)

‐30V

7.5mΩ

‐80A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±25

UNIT

Gate‐Source Voltage

V_GS

T_C= 25 °C

‐80

Continuous Drain Current

I_D

T_C= 100 °C

‐55

Pulsed Drain Current¹

I_DM

I_AS

‐160

‐35

Avalanche Current

L = 0.1mH, ID=‐35A, RG=25Ω

T_C= 25 °C

Avalanche Energy

Power Dissipation

E_AS

61.25

P_D

T_C= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

°C

100% UIS testing in condition of V_D=‐15V, L=0.1mH, V_G=‐10V, I_L=‐25A, Rated V_DS=‐30V P‐CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

Junction‐to‐Ambient³

1.6

°C / W

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

2012/4/25

p.1

12 3 4 5

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