Datasheet > EFA024A

EFA024A

更新时间： 2024-02-18 04:02:56

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	49K
描述
Low Distortion GaAs Power FET

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EFA024A 数据手册

Excelics

EFA024A

PRELIMINARY DATA SHEET

Low Distortion GaAs Power FET

+18.0dBm TYPICAL OUTPUT POWER

11.0dB TYPICAL POWER GAIN AT 12GHz

TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED

GAIN AT 12GHz

0.3 X 240 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

Idss SORTED IN 5mA PER BIN RANGE

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f=12GHz

f=18GHz

f=12GHz

f=18GHz

dBm

P_1dB

Vds=6V, Ids=50% Idss

Gain at 1dB Compression

Vds=6V, Ids=50% Idss

G_1dB

PAE

Power Added efficiency at 1dB Compression

Vds=6V, Ids=50% Idss

f=12GHz

1.6

Noise Figure Vds=3V,Ids=15mA

Associated Gain Vds=3V,Ids=15mA

f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=1.0mA

-2

-3.5

Drain Breakdown Voltage Igd=100uA

Source Breakdown Voltage Igs=100uA

Thermal Resistance (Au-Sn Eutectic Attach)

-8

-6

-12

-11

135

BVgd

BVgs

Rth

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

10V

CONTINUOUS²

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Vds

Vgs

Ids

-8V

-4V

Idss

Forward Gate Current

Input Power

6mA

1mA

Igsf

Tch

Tstg

19dBm

175^oC

-65/175^oC

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

830mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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