Datasheet > EFA025A-70

EFA025A-70

更新时间： 2024-01-23 04:53:42

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
3页	103K
描述
Low Distortion GaAs Power FET

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技术参数
数据手册

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EFA025A-70 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82
Is Samacsys：	N	Base Number Matches：	1

EFA025A-70 数据手册

EFA025A-70

UPDATED 04/28/2006

Low Distortion GaAs Power FET

FEATURES

•

None-Hermetic Low Cost Ceramic 70mil Package

+20.0 dBm Output Power at 1dB Compression

10.0 dB Power Gain at 12GHz

7.0 dB Power Gain at 18GHz

Typical 1.50 dB Noise Figure and

10.0 dB Associated Gain at 12GHz

•

0.3 x 250 Micron Recessed “Mushroom” Gate

Si₃N₄Passivation

Advanced Epitaxial Heterojunction Profile Provides High

Power Efficiency, Linearity and Reliability

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

17.0

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 6V, I_DS≈ 50% I_DSS

f = 12GHz

f = 18GHz

20.0

10.0

7.0

dBm

Gain at 1dB Compression

V_DS= 6V, I_DS≈ 50% I_DSS

f = 12GHz

f = 18GHz

8.5

G_1dB

PAE

Power Added Efficiency at 1dB Compression

_DS= 6V, I_DS≈ 50% I_DSS

Noise Figure _DS= 3V, I_DS= 15mA

Associate Gain V_DS= 3V, I_DS= 15mA

f = 12GHz

1.5

f = 12GHz

I_DSS

G_M

Saturated Drain Current

Transconductance

_DS= 3 V, V_GS= 0 V

105

-3.5

V_P

Pinch-off Voltage

V_DS= 3 V, I_DS= 1.0 mA

-2.0

-15

-14

370*

BV_GD

BV_GS

R_TH

Drain Breakdown Voltage

Source Breakdown Voltage

Thermal Resistance

_GD= 1.0mA

_GS= 1.0mA

-10

-6

^oC/W

Notes: * Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOL

V_DS

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Drain Current

VALUE

6 V

-4 V

V_GS

I_DS

52 mA

I_GSF

Forward Gate Current

Input Power

1 mA

P_IN

@ 3dB compression

310 mW

P_T

Total Power Dissipation

Channel Temperature

Storage Temperature

T_CH

150°C

T_STG

-65/+150°C

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 3

Revised May 2006

12 3

中文翻译

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