EFA025A
Excelics
DATA SHEET
Low Distortion GaAs Power FET
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•
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+21.0dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED
GAIN AT 12GHz
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•
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0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
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Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
21
21
11
9
MAX
UNIT
Output Power at 1dB Compression
f=12GHz
f=18GHz
f=12GHz
f=18GHz
19
dBm
P1dB
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
9
dB
%
G1dB
PAE
NF
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
38
1.5
10
Noise Figure Vds=3V,Ids=15mA
Associated Gain Vds=3V,Ids=15mA
f=12GHz
f=12GHz
dB
dB
mA
mS
V
A
G
Saturated Drain Current Vds=3V, Vgs=0V
35
30
65
105
-3.5
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
40
Vds=3V, Ids=1.0mA
-2
Vp
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
-15
-14
155
V
BVgd
BVgs
Rth
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
12V
CONTINUOUS2
8V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Vds
Vgs
Ids
-8V
-4V
Idss
90mA
Forward Gate Current
Input Power
6mA
1mA
Igsf
Pin
Tch
Tstg
Pt
19dBm
175oC
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com