5秒后页面跳转
EFA025A PDF预览

EFA025A

更新时间: 2024-01-27 09:31:12
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
3页 37K
描述
Low Distortion GaAs Power FET

EFA025A 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

EFA025A 数据手册

 浏览型号EFA025A的Datasheet PDF文件第2页浏览型号EFA025A的Datasheet PDF文件第3页 
EFA025A  
Excelics  
DATA SHEET  
Low Distortion GaAs Power FET  
+21.0dBm TYPICAL OUTPUT POWER  
11.0dB TYPICAL POWER GAIN AT 12GHz  
TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED  
GAIN AT 12GHz  
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
Chip Thickness: 75 ± 13 microns  
All Dimensions In Microns  
Idss SORTED IN 5mA PER BIN RANGE  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
MIN  
TYP  
21  
21  
11  
9
MAX  
UNIT  
Output Power at 1dB Compression  
f=12GHz  
f=18GHz  
f=12GHz  
f=18GHz  
19  
dBm  
P1dB  
Vds=8V, Ids=50% Idss  
Gain at 1dB Compression  
Vds=8V, Ids=50% Idss  
9
dB  
%
G1dB  
PAE  
NF  
Power Added efficiency at 1dB Compression  
Vds=8V, Ids=50% Idss  
f=12GHz  
38  
1.5  
10  
Noise Figure Vds=3V,Ids=15mA  
Associated Gain Vds=3V,Ids=15mA  
f=12GHz  
f=12GHz  
dB  
dB  
mA  
mS  
V
A
G
Saturated Drain Current Vds=3V, Vgs=0V  
35  
30  
65  
105  
-3.5  
Idss  
Gm  
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
40  
Vds=3V, Ids=1.0mA  
-2  
Vp  
Drain Breakdown Voltage Igd=1.0mA  
Source Breakdown Voltage Igs=1.0mA  
Thermal Resistance (Au-Sn Eutectic Attach)  
-12  
-7  
-15  
-14  
155  
V
BVgd  
BVgs  
Rth  
V
oC/W  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
ABSOLUTE1  
12V  
CONTINUOUS2  
8V  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Vds  
Vgs  
Ids  
-8V  
-4V  
Idss  
90mA  
Forward Gate Current  
Input Power  
6mA  
1mA  
Igsf  
Pin  
Tch  
Tstg  
Pt  
19dBm  
175oC  
-65/175oC  
@ 3dB Compression  
150oC  
-65/150oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
880mW  
730mW  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054  
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com  

与EFA025A相关器件

型号 品牌 获取价格 描述 数据表
EFA025A-100P EXCELICS

获取价格

Low Distortion GaAs Power FET
EFA025A-70 EXCELICS

获取价格

Low Distortion GaAs Power FET
EFA025AL EXCELICS

获取价格

High Gain GaAs Power FET
EFA040A EXCELICS

获取价格

Low Distortion GaAs Power FET
EFA040A-100P EXCELICS

获取价格

Low Distortion GaAs Power FET
EFA040A-70 EXCELICS

获取价格

Low Distortion GaAs Power FET
EFA060B EXCELICS

获取价格

Low Distortion GaAs Power FET
EFA060B-70 EXCELICS

获取价格

Low Distortion GaAs Power FET
EFA060BV EXCELICS

获取价格

Low Distortion GaAs Power FET
EFA072A EXCELICS

获取价格

Low Distortion GaAs Power FET