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CZT3019TRLEADFREE PDF预览

CZT3019TRLEADFREE

更新时间: 2024-11-23 13:02:43
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 95K
描述
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,

CZT3019TRLEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.1
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A基于收集器的最大容量:12 pF
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.5 V
Base Number Matches:1

CZT3019TRLEADFREE 数据手册

 浏览型号CZT3019TRLEADFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
CZT3019  
S e m ic o n d u c t o r Co r p .  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
TheCENTRALSEMICONDUCTORCZT3019  
typeisanNPNsilicontransistormanufactured  
by the epitaxial planar process, epoxy molded  
inasurfacemountpackage, designedforhigh  
currentgeneralpurposeamplifierapplications.  
SOT-223 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Current (Peak)  
Power Dissipation  
V
V
V
120  
80  
7.0  
1.0  
1.5  
2.0  
V
V
V
A
A
CBO  
CEO  
EBO  
I
C
I
CM  
P
W
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
62.5  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
10  
UNITS  
I
I
V
V
=90V  
=5.0V  
nA  
nA  
V
V
V
V
V
V
CBO  
EBO  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
FE  
FE  
FE  
CB  
EB  
BV  
BV  
BV  
V
V
V
h
h
I =100µA  
120  
80  
7.0  
C
I =30mA  
C
I =100µA  
E
I =150mA, I =15mA  
0.2  
0.5  
1.1  
C
B
B
B
C
I =500mA, I =50mA  
C
I =150mA, I =15mA  
C
V
=10V, I =0.1mA  
50  
90  
100  
50  
CE  
CE  
CE  
CE  
CE  
V
V
V
V
=10V, I =10mA  
C
h
h
h
=10V, I =150mA  
300  
C
=10V, I =500mA  
C
=10V, I =1.0A  
15  
FE  
C
306  

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