是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | POWER 223, PLASTIC PACKAGE-4 |
针数: | 4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.11 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN (315) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2.5 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
CZT3055BKLEADFREE | CENTRAL |
功能相似 |
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
CZT3055BK | CENTRAL |
功能相似 |
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
CZT3055 | CENTRAL |
功能相似 |
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CZT3055NPN | CENTRAL |
获取价格 |
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR | |
CZT3055TR | CENTRAL |
获取价格 |
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
CZT3055TR13 | CENTRAL |
获取价格 |
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
CZT3055TR13PBFREE | CENTRAL |
获取价格 |
Transistor, | |
CZT3055TRLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
CZT3090L | CENTRAL |
获取价格 |
SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR | |
CZT3090L_10 | CENTRAL |
获取价格 |
SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR | |
CZT3090LBK | CENTRAL |
获取价格 |
Transistor | |
CZT3090LE | CENTRAL |
获取价格 |
ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR | |
CZT3090LETR | CENTRAL |
获取价格 |
Transistor |