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CZT3055LEADFREE PDF预览

CZT3055LEADFREE

更新时间: 2024-11-01 21:22:35
品牌 Logo 应用领域
CENTRAL 放大器光电二极管晶体管
页数 文件大小 规格书
2页 598K
描述
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, POWER 223, PLASTIC PACKAGE-4

CZT3055LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:POWER 223, PLASTIC PACKAGE-4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.11外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN (315)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):2.5 MHz
Base Number Matches:1

CZT3055LEADFREE 数据手册

 浏览型号CZT3055LEADFREE的Datasheet PDF文件第2页 
CZT2955 PNP  
CZT3055 NPN  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY  
SILICON POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT2955 and  
CZT3055 types are surface mount epoxy molded  
complementary silicon transistors manufactured by the  
epitaxial base process, designed for surface mounted  
power amplifier applications up to 6.0 amps.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
V
100  
70  
V
V
CBO  
CER  
CEO  
EBO  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
V
7.0  
V
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
6.0  
A
C
I
3.0  
A
B
P
2.0  
W
°C  
°C/W  
D
T
Operating and Storage Junction Temperature  
Thermal Resistance  
T
-65 to +150  
62.5  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
700  
1.0  
UNITS  
μA  
mA  
mA  
V
I
I
I
V
V
V
=30V  
CEO  
CEV  
EBO  
CE  
CE  
EB  
=100V, V =1.5V  
EB  
=7.0V  
5.0  
BV  
I =30mA, R =100Ω  
70  
60  
CER  
CEO  
C
BE  
BV  
I =30mA  
V
C
V
V
I =4.0A, I =400mA  
1.1  
1.5  
70  
V
CE(SAT)  
BE(ON)  
FE  
C
B
V
=4.0V, I =4.0A  
V
CE  
CE  
CE  
CE  
C
h
h
V
V
V
=4.0V, I =4.0A  
20  
5.0  
2.5  
C
=4.0V, I =6.0A  
FE  
C
f
=10V, I =500mA, f=1.0MHz  
MHz  
T
C
R4 (1-March 2010)  

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