Datasheet > CZT3055

CZT3055

更新时间： 2024-11-01 06:51:55

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	39K
描述
2.0W Surface Mount Complementary NPN Silicon Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CZT3055 数据手册

SMD Type

TransistIoCrs

2.0W Surface Mount Complementary

NPN Silicon Power Transistor

KZT3055^(CZT3055)

SOT-223

Unit: mm

Features

+0.2

3.50

-0.2

+0.2

6.50

-0.2

High current (max. 6A).

Low voltage (max. 60V).

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector - emitter votage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCER

VCEO

VEBO

Rating

Unit

100

Collector current

Base current

power dissipation

Thermal resistance Junction-to-Ambient

Junction temperature

Storage temperature

Tstg

62.5

150

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector to emitter breakdown voltage

VCEO

VCER

ICEO

ICEV

IC=30mA

IC=30mA,RBE=100

VCE=30V

700

1.0

5.0

Collctor cutoff current

Emitter cutoff current

DC current gain

VCE=100V,VEB=1.5V

VEB = 7.0 V

m A

IEBO

IC = 4.0A; VCE =4.0 V

IC = 6.0A; VCE = 4.0V

IC = 4.0A; IB =400mA

hFE

5.0

Collector to emitter saturation voltage

Base to emitter ON voltage

Transition frequency

VCE(sat)

1.1

1.5

VBE(on) VCE=4.0V,IC=4.0A

IC= 500mA; VCE =10V; f = 1.0 MHz

2.5

MHz

www.kexin.com.cn

中文翻译

下载PDF

与CZT3055相关器件

型号	品牌	获取价格	描述	数据表
CZT3055BK	CENTRAL	获取价格	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
CZT3055BKLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
CZT3055LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
CZT3055NPN	CENTRAL	获取价格	2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
CZT3055TR	CENTRAL	获取价格	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
CZT3055TR13	CENTRAL	获取价格	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
CZT3055TR13PBFREE	CENTRAL	获取价格	Transistor,
CZT3055TRLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
CZT3090L	CENTRAL	获取价格	SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR
CZT3090L_10	CENTRAL	获取价格	SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR