Datasheet > CZT3055

CZT3055

更新时间： 2024-09-13 06:51:55

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	39K
描述
2.0W Surface Mount Complementary NPN Silicon Power Transistor

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中文翻译

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数据手册

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CZT3055 数据手册

SMD Type

TransistIoCrs

2.0W Surface Mount Complementary

NPN Silicon Power Transistor

KZT3055^(CZT3055)

SOT-223

Unit: mm

Features

+0.2

3.50

-0.2

+0.2

6.50

-0.2

High current (max. 6A).

Low voltage (max. 60V).

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector - emitter votage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCER

VCEO

VEBO

Rating

Unit

100

Collector current

Base current

power dissipation

Thermal resistance Junction-to-Ambient

Junction temperature

Storage temperature

Tstg

62.5

150

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector to emitter breakdown voltage

VCEO

VCER

ICEO

ICEV

IC=30mA

IC=30mA,RBE=100

VCE=30V

700

1.0

5.0

Collctor cutoff current

Emitter cutoff current

DC current gain

VCE=100V,VEB=1.5V

VEB = 7.0 V

m A

IEBO

IC = 4.0A; VCE =4.0 V

IC = 6.0A; VCE = 4.0V

IC = 4.0A; IB =400mA

hFE

5.0

Collector to emitter saturation voltage

Base to emitter ON voltage

Transition frequency

VCE(sat)

1.1

1.5

VBE(on) VCE=4.0V,IC=4.0A

IC= 500mA; VCE =10V; f = 1.0 MHz

2.5

MHz

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