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CY7C1049CV33-20VI PDF预览

CY7C1049CV33-20VI

更新时间: 2024-09-17 05:19:03
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 207K
描述
4-Mbit (512K x 8) Static RAM

CY7C1049CV33-20VI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:0.400 INCH, SOJ-36
针数:36Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.72Is Samacsys:N
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J36JESD-609代码:e0
长度:23.495 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:36
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ36,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:3.3 V认证状态:Not Qualified
座面最大高度:3.683 mm最大待机电流:0.01 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

CY7C1049CV33-20VI 数据手册

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CY7C1049CV33  
4-Mbit (512K x 8) Static RAM  
Features  
Functional Description[1]  
• Temperature Ranges  
The CY7C1049CV33 is a high-performance CMOS Static  
RAM organized as 524,288 words by 8 bits. Easy memory  
expansion is provided by an active LOW Chip Enable (CE), an  
active LOW Output Enable (OE), and three-state drivers.  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location  
specified on the address pins (A0 through A18).  
— Commercial: 0°C to 70°C  
— Industrial: –40°C to 85°C  
— Automotive: –40°C to 125°C  
• High speed  
— tAA = 10 ns  
• Low active power  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
— 324 mW (max.)  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a Write  
operation (CE LOW, and WE LOW).  
The CY7C1049CV33 is available in standard 400-mil-wide  
36-pin SOJ package and 44-pin TSOP II package with center  
power and ground (revolutionary) pinout.  
Logic Block Diagram  
Pin Configuration  
SOJ  
Top View  
TSOP II  
Top View  
A0  
A1  
36  
35  
34  
33  
1
NC  
A18  
A17  
A16  
A15  
44  
1
NC  
NC  
NC  
NC  
NC  
A18  
A17  
A16  
A15  
OE  
I/O  
2
3
4
43  
42  
41  
40  
39  
38  
2
3
4
5
6
A2  
A
0
A
A3  
A4  
1
2
A
32  
5
I/O  
0
A3  
A4  
CE  
I/O0  
I/O1  
VCC  
INPUT BUFFER  
31  
30  
29  
28  
6
OE  
I/O7  
I/O6  
7
A
37  
36  
35  
34  
33  
7
8
9
10  
11  
12  
13  
0
CE  
I/O  
8
I/O  
I/O  
1
A
1
9
0
7
A
2
10  
11  
12  
13  
I/O  
I/O  
GND  
1
6
SS  
2
A
3
V
V
CC  
27  
26  
25  
A
GND  
I/O2  
I/O3  
WE  
VCC  
I/O5  
I/O4  
A14  
A13  
A12  
4
V
V
SS  
CC  
A
6
5
I/O  
I/O  
I/O  
I/O  
3
4
5
512K x 8  
ARRAY  
32  
I/O  
I/O  
2
5
A
31  
30  
29  
28  
I/O  
4
A14  
A13  
I/O  
14  
15  
16  
17  
18  
19  
20  
21  
22  
3
A
7
24  
23  
22  
21  
20  
WE  
A5  
A6  
A
8
9
A
A5  
A6  
A7  
A8  
A9  
14  
15  
16  
17  
18  
A12  
A
10  
27  
26  
25  
A
11  
A
7
A11  
A10  
NC  
A
A
8
10  
6
7
POWER  
DOWN  
A
NC  
NC  
9
COLUMN  
DECODER  
CE  
NC  
NC  
24  
23  
19  
NC  
I/O  
WE  
OE  
Notes:  
1. For guidelines on SRAM system design, please refer to the System Design Guidelines Cypress application note, available on the internet at www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05006 Rev. *E  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised March 29, 2005  

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