CY7C1049DV33
4-Mbit (512K x 8) Static RAM
Features
Functional Description[1]
• Pin- and function-compatible with CY7C1049CV33
• High speed
The CY7C1049DV33 is a high-performance CMOS Static
RAM organized as 512K words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. Writing
to the device is accomplished by taking Chip Enable (CE) and
Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0
through I/O7) is then written into the location specified on the
address pins (A0 through A18).
— tAA = 10 ns
• Low active power
— ICC = 90 mA @ 10 ns (Industrial)
• Low CMOS standby power
— ISB2 = 10 mA
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
• 2.0V data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a Write
operation (CE LOW, and WE LOW).
• Available in Lead-Free 36-lead (400-mil) Molded SOJ
V36 and 44-pin TSOP II ZS44 packages
The CY7C1049DV33 is available in standard 400-mil-wide
36-pin SOJ package and 44-pin TSOP II package with center
power and ground (revolutionary) pinout.
Pin Configuration
Logic Block Diagram
TSOP II
SOJ
Top View
Top View
44
1
NC
NC
NC
NC
NC
A18
A17
A16
A15
OE
I/O
A0
A1
36
1
NC
A18
A17
A16
A15
43
42
41
40
39
38
2
3
4
5
6
35
34
33
2
3
4
A
0
A2
A
1
A3
A4
A
2
32
5
A3
A4
I/O
0
7
CE
I/O0
I/O1
VCC
INPUTBUFFER
31
30
29
28
6
OE
I/O7
I/O6
37
36
35
34
33
CE
I/O
8
A
0
I/O
I/O
7
8
9
10
11
12
13
1
A
1
9
0
7
A
2
10
11
12
13
I/O
V
SS
I/O
SS
1
CC
6
2
A
3
4
GND
V
A
27
26
25
GND
I/O2
I/O3
WE
VCC
I/O5
I/O4
A14
A13
A12
V
A
6
V
5
I/O
3
I/O
4
I/O
5
CC
512K x 8
A
32
I/O
I/O
I/O
2
5
4
A
7
31
30
29
28
I/O
14
15
16
17
18
19
20
21
22
3
A
8
A
WE
A5
A6
A14
A13
24
23
22
21
20
19
9
A
10
A5
A6
A7
A8
A9
14
15
16
17
18
A12
27
26
25
A
11
A
I/O
7
6
7
POWER
DOWN
COLUMN
DECODER
A11
A10
NC
A
8
A
10
CE
A
NC
NC
NC
9
I/O
WE
NC
NC
24
23
OE
Selection Guide
-10 (Industrial)
-12 (Automotive)[2]
Unit
ns
Maximum Access Time
10
90
10
12
95
15
Maximum Operating Current
mA
mA
Maximum CMOS Standby Current
Notes:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
2. Automotive product information is Preliminary.
Cypress Semiconductor Corporation
Document #: 38-05475 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 3, 2006
[+] Feedback