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CY7C1049DV33-8ZSXC PDF预览

CY7C1049DV33-8ZSXC

更新时间: 2024-11-09 15:30:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 203K
描述
Standard SRAM, 512KX8, 8ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

CY7C1049DV33-8ZSXC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.65
最长访问时间:8 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e4
长度:18.415 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified座面最大高度:1.194 mm
最大待机电流:0.01 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.09 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:20宽度:10.16 mm
Base Number Matches:1

CY7C1049DV33-8ZSXC 数据手册

 浏览型号CY7C1049DV33-8ZSXC的Datasheet PDF文件第2页浏览型号CY7C1049DV33-8ZSXC的Datasheet PDF文件第3页浏览型号CY7C1049DV33-8ZSXC的Datasheet PDF文件第4页浏览型号CY7C1049DV33-8ZSXC的Datasheet PDF文件第5页浏览型号CY7C1049DV33-8ZSXC的Datasheet PDF文件第6页浏览型号CY7C1049DV33-8ZSXC的Datasheet PDF文件第7页 
PRELIMINARY  
CY7C1049DV33  
4-Mbit (512K x 8) Static RAM  
Features  
Functional Description[1]  
• Pin- and function-compatible with CY7C1049CV33  
• High speed  
The CY7C1049DV33 is a high-performance CMOS Static  
RAM organized as 524,288 words by 8 bits. Easy memory  
expansion is provided by an active LOW Chip Enable (CE), an  
active LOW Output Enable (OE), and three-state drivers.  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location  
specified on the address pins (A0 through A18).  
— tAA = 8 ns  
• Low active power  
— ICC = 90 mA @ 8 ns (Commercial)  
— ICC = 100 mA @ 8 ns (Industrial)  
• Low CMOS standby power  
— ISB2 = 10 mA  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a Write  
operation (CE LOW, and WE LOW).  
• Available in Lead-Free 36-lead (400-mil) Molded SOJ  
V36 and 44-pin TSOP II ZS44 packages  
The CY7C1049DV33 is available in standard 400-mil-wide  
36-pin SOJ package and 44-pin TSOP II package with center  
power and ground (revolutionary) pinout.  
Logic Block Diagram  
Pin Configuration  
TSOP II  
SOJ  
Top View  
Top View  
44  
1
NC  
NC  
NC  
NC  
NC  
A18  
A17  
A16  
A15  
OE  
I/O  
A0  
A1  
36  
35  
34  
33  
1
NC  
A18  
A17  
A16  
A15  
43  
42  
41  
40  
39  
38  
2
3
4
5
6
2
3
4
A
0
A2  
A
1
A3  
A4  
A
2
32  
5
A3  
A4  
I/O  
0
7
CE  
I/O0  
I/O1  
VCC  
INPUTBUFFER  
31  
30  
29  
28  
6
OE  
I/O7  
I/O6  
37  
36  
35  
34  
33  
CE  
I/O  
8
A
0
I/O  
I/O  
7
8
9
10  
11  
12  
13  
1
A
1
9
0
7
A
2
10  
11  
12  
13  
I/O  
V
SS  
I/O  
SS  
1
CC  
6
2
A
3
4
GND  
V
A
27  
26  
25  
GND  
I/O2  
I/O3  
WE  
VCC  
I/O5  
I/O4  
A14  
A13  
A12  
V
A
6
V
5
I/O  
3
I/O  
4
I/O  
5
CC  
512K x 8  
A
32  
I/O  
I/O  
I/O  
2
5
4
A
7
31  
30  
29  
28  
I/O  
14  
15  
16  
17  
18  
19  
20  
21  
22  
3
A
8
A
WE  
A5  
A6  
A14  
A13  
24  
23  
22  
21  
20  
19  
9
A
10  
A5  
A6  
A7  
A8  
A9  
14  
15  
16  
17  
18  
A12  
27  
26  
25  
A
11  
A
I/O  
7
6
7
POWER  
DOWN  
COLUMN  
DECODER  
A11  
A10  
NC  
A
8
A
10  
CE  
A
NC  
NC  
NC  
9
I/O  
WE  
NC  
NC  
24  
23  
OE  
Selection Guide  
-8  
8
-10  
-12  
12  
75  
85  
10  
Unit  
Maximum Access Time  
10  
80  
90  
10  
ns  
Maximum Operating Current  
Commercial  
Industrial  
90  
100  
10  
mA  
Maximum CMOS Standby Current Commercial/Industrial  
mA  
Note:  
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05475 Rev. *B  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised July 29 2005  

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