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CY62167DV30LL-55BVXI PDF预览

CY62167DV30LL-55BVXI

更新时间： 2024-11-20 04:53:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
12页 343K
描述
16-Mbit (1M x 16) Static RAM

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中文翻译

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CY62167DV30LL-55BVXI 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：BGA
包装说明：VFBGA, BGA48,6X8,30针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：1.94
最长访问时间：55 nsI/O 类型：COMMON
JESD-30 代码：R-PBGA-B48JESD-609代码：e1
长度：9.5 mm内存密度：16777216 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
湿度敏感等级：3功能数量：1
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装等效代码：BGA48,6X8,30封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1 mm
最大待机电流：0.00001 A最小待机电流：1.5 V
子类别：SRAMs最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.2 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：30宽度：8 mm
Base Number Matches：1

CY62167DV30LL-55BVXI 数据手册

 浏览型号CY62167DV30LL-55BVXI的Datasheet PDF文件第2页浏览型号CY62167DV30LL-55BVXI的Datasheet PDF文件第3页浏览型号CY62167DV30LL-55BVXI的Datasheet PDF文件第4页浏览型号CY62167DV30LL-55BVXI的Datasheet PDF文件第5页浏览型号CY62167DV30LL-55BVXI的Datasheet PDF文件第6页浏览型号CY62167DV30LL-55BVXI的Datasheet PDF文件第7页 
CY62167DV30 MoBL®  
16-Mbit (1M x 16) Static RAM  
also has an automatic power-down feature that significantly  
reduces power consumption by 99% when addresses are not  
toggling. The device can also be put into standby mode when  
deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are  
HIGH). The input/output pins (I/O0 through I/O15) are placed  
in a high-impedance state when: deselected (CE1HIGH or CE2  
LOW), outputs are disabled (OE HIGH), both Byte High  
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),  
or during a Write operation (CE1 LOW, CE2 HIGH and WE  
LOW).  
Features  
• TSOP I Configurable as 1M x 16 or as 2M x 8 SRAM  
• Very high speed: 45 ns  
• Wide voltage range: 2.2V – 3.6V  
• Ultra-low active power  
— Typical active current: 2 mA @ f = 1 MHz  
— Typical active current: 18.5 mA @ f = fMax (45 ns  
speed)  
Writing to the device is accomplished by taking Chip Enables  
(CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.  
If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0  
through I/O7), is written into the location specified on the  
address pins (A0 through A19). If Byte High Enable (BHE) is  
LOW, then data from I/O pins (I/O8 through I/O15) is written into  
the location specified on the address pins (A0 through A19).  
• Ultra-low standby power  
• Easy memory expansion with CE1, CE2 and OE features  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
• Available in Pb-free and non Pb-free 48-ball VFBGA  
and 48-pin TSOP I package  
Reading from the device is accomplished by taking Chip  
Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE)  
LOW while forcing the Write Enable (WE) HIGH. If Byte Low  
Enable (BLE) is LOW, then data from the memory location  
specified by the address pins will appear on I/O0 to I/O7. If Byte  
High Enable (BHE) is LOW, then data from memory will appear  
on I/O8 to I/O15. See the truth table at the back of this data  
sheet for a complete description of Read and Write modes.  
Functional Description[1]  
The CY62167DV30 is a high-performance CMOS static RAM  
organized as 1M words by 16 bits. This device features  
advanced circuit design to provide ultra-low active current.  
This is ideal for providing More Battery Life™ (MoBL®) in  
portable applications such as cellular telephones. The device  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A 9  
A 8  
A 7  
A 6  
A 5  
A 4  
A 3  
1M × 16 / 2M x 8  
RAM Array  
I/O0–I/O7  
I/O8–I/O15  
A 2  
A 1  
A 0  
COLUMN DECODER  
BYTE  
BHE  
WE  
CE2  
CE1  
OE  
BLE  
Power-Down  
Circuit  
CE2  
CE1  
BHE  
BLE  
Note:  
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05328 Rev. *G  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised July 27, 2006  
[+] Feedback  
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中文翻译

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CY62167DV30LL-55BVXI 替代型号

型号 品牌 替代类型 描述 数据表
CY62167DV30LL-55BVXIT CYPRESS

完全替代

 16-Mbit (1 M × 16) Static RAM
CY62167DV30LL-70BVI CYPRESS

类似代替

 16-Mbit (1M x 16) Static RAM
CY62167DV30LL-55BVI CYPRESS

类似代替

 16-Mbit (1M x 16) Static RAM

与CY62167DV30LL-55BVXI相关器件

型号 品牌 获取价格 描述 数据表
CY62167DV30LL-55BVXIT CYPRESS

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 		16-Mbit (1 M × 16) Static RAM
CY62167DV30LL-55BVXIT INFINEON

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 		Asynchronous SRAM
CY62167DV30LL-55ZI CYPRESS

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 		16-Mbit (1M x 16) Static RAM
CY62167DV30LL-55ZIT CYPRESS

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 		Standard SRAM, 1MX16, 55ns, CMOS, PDSO48, 12 X 18.40 MM, 1 MM HEIGHT, MO-142, TSOP1-48
CY62167DV30LL-55ZXI CYPRESS

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 		16-Mbit (1M x 16) Static RAM
CY62167DV30LL-55ZXI INFINEON

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 		Asynchronous SRAM
CY62167DV30LL-55ZXIT INFINEON

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 		Asynchronous SRAM
CY62167DV30LL-70BVI CYPRESS

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 		16-Mbit (1M x 16) Static RAM
CY62167DV30LL-70BVI INFINEON

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 		Asynchronous SRAM
CY62167DV30LL-70BVIT INFINEON

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 		Asynchronous SRAM

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