Datasheet > CY62167E_10

CY62167E_10

更新时间： 2024-11-20 09:42:51

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
15页	478K
描述
16-Mbit (1 M × 16 / 2 M × 8) Static RAM

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CY62167E_10 数据手册

CY62167E MoBL^®

16-Mbit (1 M × 16 / 2 M × 8) Static RAM

16-Mbit (1M

× 16 / 2M × 8) Static RAM

reduces power consumption by 99% when addresses are not

toggling. Place the device into standby mode when deselected

(CE₁HIGH, or CE₂LOW, or both BHE and BLE are HIGH). The

input and output pins (I/O₀through I/O₁₅) are placed in a high

impedance state when:

Features

■ Configurable as 1 M × 16 or as 2 M × 8 SRAM

■ Very high speed: 45 ns

■ Wide voltage range: 4.5 V to 5.5 V

■ The device is deselected (CE₁HIGH or CE₂LOW)

■ Outputs are disabled (OE HIGH)

■ Ultra low standby power

❐ Typical standby current: 1.5 µA

❐ Maximum standby current: 12 µA

■ Both byte high enable and byte low enable are disabled (BHE,

BLE HIGH) or

■ Ultra low active power

❐ Typical active current: 2.2 mA at f = 1 MHz

■ A write operation is in progress (CE₁LOW, CE₂HIGH, and WE

LOW)

■ Easy memory expansion with CE₁, CE₂, and OE features

■ Automatic power-down when deselected

■ CMOS for optimum speed and power

To write to the device, take chip enables (CE₁LOW and CE₂

HIGH) and write enable (WE) input LOW. If byte low enable

(BLE) is LOW, then data from I/O pins (I/O₀through I/O₇), is

written into the location specified on the address pins (A₀through

₁₉). If byte high enable (BHE) is LOW, then data from the I/O

■ Offered in 48-pin TSOP I package

pins (I/O₈through I/O₁₅) is written into the location specified on

the address pins (A₀through A₁₉).

Functional Description^[1]

To read from the device, take chip enables (CE₁LOW and CE₂

HIGH) and output enable (OE) LOW while forcing the write

enable (WE) HIGH. If byte low enable (BLE) is LOW, then data

from the memory location specified by the address pins appears

on I/O₀to I/O₇. If byte high enable (BHE) is LOW, then data from

memory appears on I/O₈to I/O₁₅. See the “Truth Table” on

page 11 for a complete description of read and write modes.

The CY62167E is a high performance CMOS static RAM

organized as 1 M words by 16-bits/2 M words by 8-bits. This

device features advanced circuit design to provide an ultra low

active current. This is ideal for providing More Battery Life™

(MoBL^®) in portable applications such as cellular telephones.

The device also has an automatic power down feature that

Logic Block Diagram

DATA IN DRIVERS

A₁₀

A ₉

A ₈

A ₇

A ₆

A ₅

1 M × 16 / 2 M × 8

I/O₀–I/O₇

RAM ARRAY

A ₄

A ₃

I/O₈–I/O₁₅

A ₂

A ₁

A ₀

COLUMN DECODER

BYTE

BHE

CE₂

POWER DOWN

CIRCUIT

BHE

BLE

Note

1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Cypress Semiconductor Corporation

Document Number: 001-15607 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised August 16, 2010

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与CY62167E_10相关器件

型号	品牌	获取价格	描述	数据表
CY62167E_11	CYPRESS	获取价格	16-Mbit (1 M x 16 / 2 M x 8) Static RAM Automatic power-down when deselected
CY62167E_13	CYPRESS	获取价格	16-Mbit (1 M x 16 / 2 M x 8) Static RAM
CY62167ELL	CYPRESS	获取价格	16-Mbit (1 M × 16 / 2 M × 8) Static RAM
CY62167ELL-45ZXI	CYPRESS	获取价格	16-Mbit (1M x 16 / 2M x 8) Static RAM
CY62167ELL-45ZXI	INFINEON	获取价格	Asynchronous SRAM
CY62167ELL-45ZXIT	INFINEON	获取价格	Asynchronous SRAM
CY62167ESL-55FNXI	CYPRESS	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PBGA60, WLCSP-60
CY62167EV18	CYPRESS	获取价格	16-Mbit (1M x 16) Static RAM
CY62167EV18_11	CYPRESS	获取价格	16 Mbit (1M x 16) Static RAM Automatic power down when deselected
CY62167EV18LL-45BVXI	CYPRESS	获取价格	Standard SRAM, 1MX16, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48

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