Datasheet > 晶体管 > IGBT> CPV362M4U

CPV362M4U

更新时间： 2024-11-19 22:28:43

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
10页	276K
描述
UltraFast IGBT IGBT SIP MODULE

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中文翻译

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数据手册

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CPV362M4U 数据手册

PD -5044

CPV362M4U

PRELIMINARY

IGBT SIP MODULE

UltraFast IGBT

Features

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

D 1

D 3

D 4

D 5

D 6

Q 1

Q 2

Q 3

Q 4

Q 5

Q 6

1 5

1 0

1 6

D 2

1 2

1 8

Product Summary

Output Current in a Typical 20 kHz Motor Drive

1 3

1 9

4.6 A_RMSper phase (1.3 kW total) with T_C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 115% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

IMS-2

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

600

Units

V_CES

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

7.2

I_C@ T_C= 100°C

3.9

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

3.4

I_FM

V_GE

±20

V_RMS

V_ISOL

Isolation Voltage, any terminal to case, 1 minute

Maximum Power Dissipation, each IGBT

2500

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation, each IGBT

9.1

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

5.5

9.0

Units

°C/W

g (oz)

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink, flat, greased surface

_θJC(DIODE)

_θCS(MODULE)

–––

0.10

–––

Weight of module

20 (0.7)

12/23/96

12 3 4 5 6 7...10

中文翻译

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