CPV363M4FPBF

更新时间： 2024-11-20 12:58:51

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率控制双极性晶体管局域网超快软恢复二极管快速软恢复二极管
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11页	279K
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CPV363M4FPBF 数据手册

CPV363M4KPbF

Vishay High Power Products

IGBT SIP Module

(Short Circuit Rated Ultrafast IGBT)

FEATURES

• Short circuit rated ultrafast: Optimized for high

speed over 5.0 kHz (see fig. 1 for current vs.

frequency curve), and short circuit rated to 10 µs

at 125 °C, V_GE= 15 V

RoHS

COMPLIANT

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED^®soft ultrafast diodes

IMS-2

• Totally lead (Pb)-free

PRODUCT SUMMARY

• Designed and qualified for industrial level

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

DESCRIPTION

I_RMSper phase (1.94 kW total)

6.7 A_RMS

with T_C= 90 °C

The IGBT technology is the key to Vishay’s HPP advanced

line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar

transistor modules, while at the same time having the simpler

gate-drive requirements of the familiar power MOSFET. This

superior technology has now been coupled to a state of the

art materials system that maximizes power throughput with

low thermal resistance. This package is highly suited to

motor drive applications and where space is at a premium.

T_J

125 °C

360 Vdc

0.8

Supply voltage

Power factor

Modulation depth (see fig. 1)

115 %

_CE(on)(typical)

at I_C= 6.0 A, 25 °C

1.72 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

_C= 100 °C

Continuous collector current, each IGBT

Pulsed collector current

I_C

6.0

Repetitive rating; V_GE= 20 V, pulse width

limited by maximum junction temperature

See fig. 20

I_CM

V_CC= 80 % (V_CES), V_GE= 20 V,

L = 10 µH, R_G= 22 Ω

See fig. 19

Clamped inductive load current

I_LM

Diode continuous forward current

Diode maximum forward current

Short circuit withstand time

Gate to emitter voltage

I_F

I_FM

T_C= 100 °C

6.1

t_SC

µs

V_GE

V_ISOL

Isolation voltage

Any terminal to case, t = 1 minute

T_C= 25 °C

2500

V_RMS

Maximum power dissipation, each IGBT

P_D

T_C= 100 °C

Operating junction and

storage temperature range

T_J, T_Stg

- 40 to + 150

300

°C

Soldering temperature

For 10 s, (0.063" (1.6 mm) from case)

6-32 or M3 screw

5 to 7

(0.55 to 0.8)

lbf ⋅ in

(N ⋅ m)

Mounting torque

Document Number: 94485

Revision: 01-Sep-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

12 3 4 5 6 7...11

中文翻译

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与CPV363M4FPBF相关器件

型号	品牌	获取价格	描述	数据表
CPV363M4K	INFINEON	获取价格	IGBT SIP MODULE
CPV363M4KPBF	VISHAY	获取价格	IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
CPV363M4U	INFINEON	获取价格	IGBT SIP MODULE
CPV363M4UPBF	VISHAY	获取价格	IGBT SIP Module (Ultrafast IGBT)
CPV363MF	INFINEON	获取价格	IGBT SIP MODULE Fast IGBT
CPV363MFPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, IMS-2, 13 PIN
CPV363MK	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
CPV363MM	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated Fast IGBT
CPV363MU	INFINEON	获取价格	IGBT SIP MODULE Ultra-Fast IGBT
CPV363MUPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel

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