Datasheet > 晶体管 > IGBT> CPV364MM

CPV364MM

更新时间： 2024-11-17 21:53:59

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
2页	83K
描述
Short Circuit Rated Fast IGBT

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Preliminary Data Sheet PD - 5.035

CPV364MM

Short Circuit Rated Fast IGBT

IGBT SIP MODULE

Features

• Short Circuit Rated - 10µs @ 125°C, V _GE= 15V

Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency (1 to

10kHz)

•

Product Summary

Output Current in a Typical 5.0 kHz Motor Drive

13 A_RMSper phase (4.1 kW total) with T _C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 80%

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS

(Insulated Metal Substrate) Power Modules. These modules are more efficient

than comparable bipolar transistor modules, while at the same time having the

simpler gate-drive requirements of the familiar power MOSFET. This superior

technology has now been coupled to a state of the art materials system that

maximizes power throughput with low thermal resistance. This package is highly

suited to power applications and where space is at a premium.

These new short circuit rated devices are especially suited for motor control and

other totem-pole applications requiring short circuit withstand capability.

IMS-2

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

600

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

I_F@ T_C= 100°C

9.3

I_FM

t_sc

µs

V_GE

Gate-to-Emitter Voltage

± 20

2500

62.5

V_ISOL

Isolation Voltage, any terminal to case, 1 minute

Maximum Power Dissipation, each IGBT

V_RMS

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation, each IGBT

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55 - 0.8 N•m)

Thermal Resistance

Parameter

Typ.

—

Max.

Units

°C/W

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink, flat, greased surface

2.0

3.0

—

_θJC(DIODE)

_θCS(MODULE)

—

0.1

Weight of module

20 (0.7)

—

g (oz)

Revision 2

C-425

中文翻译

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与CPV364MM相关器件

型号	品牌	获取价格	描述	数据表
CPV364MU	INFINEON	获取价格	IGBT SIP MODULE Ultra-Fast IGBT
CP-V413PS	PULSE	获取价格	SPLITTER VDSL ADSL FLUSHMOUNT
CPV-E10-1S-6P	FERROXCUBE	获取价格	CPV-E20/10/5-1S-6P
CPV-E13-1S-10P-Z	FERROXCUBE	获取价格	CPV-E25-1S-10P-Z
CPV-E20	FERROXCUBE	获取价格	Dimensions for product: E20/10/5
CPV-E20-105-1S-6P	FERROXCUBE	获取价格	Dimensions for product: E20/10/5
CPV-E20-1S-6P	FERROXCUBE	获取价格	CPV-E20/10/5-1S-6P
CPV-E25-1S-10P-Z	FERROXCUBE	获取价格	CPV-E25-1S-10P-Z
CPV-E5-1S-6P	FERROXCUBE	获取价格	CPV-E20/10/5-1S-6P
CPV-E7-1S-10P-Z	FERROXCUBE	获取价格	CPV-E25-1S-10P-Z

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