Datasheet > 晶体管 > IGBT> CPV364MU

CPV364MU

更新时间： 2024-11-17 22:28:43

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
8页	422K
描述
IGBT SIP MODULE Ultra-Fast IGBT

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PD - 5.025A

CPV364MU

IGBT SIP MODULE

Ultra-Fast IGBT

Features

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

Product Summary

Output Current in a Typical 20 kHz Motor Drive

5.4 A_RMSper phase (1.7 kW total) with T _C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

IMS-2

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

600

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

9.3

I_FM

V_GE

±20

V_RMS

V_ISOL

Isolation Voltage, any terminal to case, 1 min.

Maximum Power Dissipation, each IGBT

2500

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation, each IGBT

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance

Parameter

Typ.

—

Max.

Units

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink,flat,greased surface

2.0

3.0

—

_θJC(DIODE)

_θCS(MODULE)

—

°C/W

0.1

Weight of module

20 (0.7)

—

g (oz)

Revision 1

C-757

To Order

12 3 4 5 6 7 8

中文翻译

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CPV-P11-1S-6PDL-Z	FERROXCUBE	获取价格	CPV-P18/11-1S-6PDL-Z

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