Datasheet > CPV363MFPBF

CPV363MFPBF

更新时间： 2024-11-18 21:21:03

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网栅功率控制晶体管
页数	文件大小	规格书
8页	238K
描述
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, IMS-2, 13 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CPV363MFPBF 数据手册

PD - 5.023B

CPV363MF

IGBT SIP MODULE

Fast IGBT

Features

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

Product Summary

Output Current in a Typical 5.0 kHz Motor Drive

7.65 A_RMSper phase (2.4 kW total) with T_C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

IMS-2

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

600

Units

V_CES

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

I_C@ T_C= 100°C

8.7

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

6.1

I_FM

V_GE

±20

V_RMS

V_ISOL

Isolation Voltage, any terminal to case, 1 min.

Maximum Power Dissipation, each IGBT

2500

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation, each IGBT

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance

Parameter

Typ.

—

Max.

Units

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink, flat, greased surface

3.5

5.5

—

_θJC(DIODE)

_θCS(MODULE)

—

°C/W

0.1

Weight of module

20 (0.7)

—

g (oz)

Revision 1

C-149

12 3 4 5 6 7 8

中文翻译

下载PDF

与CPV363MFPBF相关器件

型号	品牌	获取价格	描述	数据表
CPV363MK	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
CPV363MM	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated Fast IGBT
CPV363MU	INFINEON	获取价格	IGBT SIP MODULE Ultra-Fast IGBT
CPV363MUPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel
CPV364M4F	INFINEON	获取价格	IGBT SIP MODULE
CPV364M4K	INFINEON	获取价格	IGBT SIP MODULE
CPV364M4KPBF	INFINEON	获取价格	IGBT SIP MODULE
CPV364M4KPBF	VISHAY	获取价格	CPV364M4KPBF (Short Circuit Rated Ultrafast IGBT)
CPV364M4U	INFINEON	获取价格	IGBT SIP MODULE
CPV364M4UPBF	VISHAY	获取价格	IGBT SIP Module (Ultrafast IGBT)

与CPV363MFPBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

CPV363MFPBF

CPV363MFPBF 数据手册

与CPV363MFPBF相关器件

与CPV363MFPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CPV363MFPBF

CPV363MFPBF 数据手册

与CPV363MFPBF相关器件

与CPV363MFPBF相关文章

您还可以找

您在本页遇到什么问题？