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PD - 5.034
CPV363MK
IGBT SIP MODULE
Short Circuit Rated UltraFast IGBT
Features
1
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
•
D1
D2
D3
D4
D5
D6
Q1
Q2
Q3
Q4
Q5
3
6
9
4
15
10
16
Q6
12
18
Product Summary
Output Current in a Typical 20 kHz Motor Drive
7
13
19
5.4 ARMS per phase (1.7 kW total) with T C = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
IMS-2
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
11
IC @ TC = 100°C
6.0
ICM
22
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
22
IF @ TC = 100°C
6.1
IFM
22
10
tsc
µs
V
VGE
Gate-to-Emitter Voltage
± 20
VISOL
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
2500
36
VRMS
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
14
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter
Typ.
—
Max.
Units
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
3.5
5.5
—
θJC (DIODE)
θCS (MODULE)
—
°C/W
0.1
Wt
Weight of module
20 (0.7)
—
g (oz)
Revision 2
C-971
To Order