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CPV363MK

更新时间: 2024-10-29 22:28:43
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英飞凌 - INFINEON 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
8页 416K
描述
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

CPV363MK 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
PD - 5.034  
CPV363MK  
IGBT SIP MODULE  
Short Circuit Rated UltraFast IGBT  
Features  
1
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V  
Fully isolated printed circuit board mount package  
• Switching-loss rating includes all "tail" losses  
• HEXFREDTM soft ultrafast diodes  
• Optimized for high operating frequency (over 5kHz)  
See Fig. 1 for Current vs. Frequency curve  
D1  
D2  
D3  
D4  
D5  
D6  
Q1  
Q2  
Q3  
Q4  
Q5  
3
6
9
4
15  
10  
16  
Q6  
12  
18  
Product Summary  
Output Current in a Typical 20 kHz Motor Drive  
7
13  
19  
5.4 ARMS per phase (1.7 kW total) with T C = 90°C, TJ = 125°C, Supply Voltage 360Vdc,  
Power Factor 0.8, Modulation Depth 80% (See Figure 1)  
Description  
The IGBT technology is the key to International Rectifier's advanced line of IMS  
(Insulated Metal Substrate) Power Modules. These modules are more efficient  
than comparable bipolar transistor modules, while at the same time having the  
simpler gate-drive requirements of the familiar power MOSFET. This superior  
technology has now been coupled to a state of the art materials system that  
maximizes power throughput with low thermal resistance. This package is highly  
suited to power applications and where space is at a premium.  
IMS-2  
These new short circuit rated devices are especially suited for motor control and  
other totem-pole applications requiring short circuit withstand capability.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
600  
V
IC @ TC = 25°C  
Continuous Collector Current, each IGBT  
Continuous Collector Current, each IGBT  
Pulsed Collector Current  
11  
IC @ TC = 100°C  
6.0  
ICM  
22  
A
ILM  
Clamped Inductive Load Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
22  
IF @ TC = 100°C  
6.1  
IFM  
22  
10  
tsc  
µs  
V
VGE  
Gate-to-Emitter Voltage  
± 20  
VISOL  
Isolation Voltage, any terminal to case, 1 min.  
Maximum Power Dissipation, each IGBT  
2500  
36  
VRMS  
W
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation, each IGBT  
14  
TJ  
Operating Junction and  
-40 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
5-7 lbf•in (0.55 - 0.8 N•m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
R
R
R
θJC (IGBT)  
Junction-to-Case, each IGBT, one IGBT in conduction  
Junction-to-Case, each diode, one diode in conduction  
Case-to-Sink, flat, greased surface  
3.5  
5.5  
θJC (DIODE)  
θCS (MODULE)  
°C/W  
0.1  
Wt  
Weight of module  
20 (0.7)  
g (oz)  
Revision 2  
C-971  
To Order  
 

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