Datasheet > 晶体管 > IGBT> CPV363MK

CPV363MK

更新时间： 2024-11-17 22:28:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管电动机控制双极性晶体管栅局域网
页数	文件大小	规格书
8页	416K
描述
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

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PD - 5.034

CPV363MK

IGBT SIP MODULE

Short Circuit Rated UltraFast IGBT

Features

• Short Circuit Rated - 10µs @ 125°C, V _GE= 15V

Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

•

Product Summary

Output Current in a Typical 20 kHz Motor Drive

5.4 A_RMSper phase (1.7 kW total) with T _C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS

(Insulated Metal Substrate) Power Modules. These modules are more efficient

than comparable bipolar transistor modules, while at the same time having the

simpler gate-drive requirements of the familiar power MOSFET. This superior

technology has now been coupled to a state of the art materials system that

maximizes power throughput with low thermal resistance. This package is highly

suited to power applications and where space is at a premium.

IMS-2

These new short circuit rated devices are especially suited for motor control and

other totem-pole applications requiring short circuit withstand capability.

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

600

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

I_C@ T_C= 100°C

6.0

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

I_F@ T_C= 100°C

6.1

I_FM

t_sc

µs

V_GE

Gate-to-Emitter Voltage

± 20

V_ISOL

Isolation Voltage, any terminal to case, 1 min.

Maximum Power Dissipation, each IGBT

2500

V_RMS

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation, each IGBT

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55 - 0.8 N•m)

Thermal Resistance

Parameter

Typ.

—

Max.

Units

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink, flat, greased surface

3.5

5.5

—

_θJC(DIODE)

_θCS(MODULE)

—

°C/W

0.1

Weight of module

20 (0.7)

—

g (oz)

Revision 2

C-971

To Order

12 3 4 5 6 7 8

中文翻译

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与CPV363MK相关器件

型号	品牌	获取价格	描述	数据表
CPV363MM	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated Fast IGBT
CPV363MU	INFINEON	获取价格	IGBT SIP MODULE Ultra-Fast IGBT
CPV363MUPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel
CPV364M4F	INFINEON	获取价格	IGBT SIP MODULE
CPV364M4K	INFINEON	获取价格	IGBT SIP MODULE
CPV364M4KPBF	INFINEON	获取价格	IGBT SIP MODULE
CPV364M4KPBF	VISHAY	获取价格	CPV364M4KPBF (Short Circuit Rated Ultrafast IGBT)
CPV364M4U	INFINEON	获取价格	IGBT SIP MODULE
CPV364M4UPBF	VISHAY	获取价格	IGBT SIP Module (Ultrafast IGBT)
CPV364MF	INFINEON	获取价格	IGBT SIP MODULE Fast IGBT

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