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CPV364M4KPBF PDF预览

CPV364M4KPBF

更新时间: 2024-11-18 12:52:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率控制双极性晶体管超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
11页 269K
描述
CPV364M4KPBF (Short Circuit Rated Ultrafast IGBT)

CPV364M4KPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T13
针数:13Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:20 weeks 1 day
风险等级:5.03其他特性:ULTRA FAST SOFT RECOVERY
外壳连接:ISOLATED最大集电极电流 (IC):24 A
集电极-发射极最大电压:600 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-PSIP-T13
元件数量:6端子数量:13
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):63 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):400 ns
标称接通时间 (ton):77 nsVCEsat-Max:2.3 V
Base Number Matches:1

CPV364M4KPBF 数据手册

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CPV364M4KPbF  
Vishay High Power Products  
IGBT SIP Module  
(Short Circuit Rated Ultrafast IGBT)  
FEATURES  
• Short circuit rated ultrafast: Optimized for high  
speed > 5.0 kHz, and short circuit rated to 10 µs  
at 125 °C, VGE = 15 V  
RoHS  
COMPLIANT  
• Fully isolated printed circuit board mount package  
• Switching-loss rating includes all “tail” losses  
• HEXFRED® soft ultrafast diodes  
IMS-2  
• Totally lead (Pb)-free and RoHS compliant  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE  
DESCRIPTION  
I
RMS per phase (3.1 kW total)  
with TC = 90 °C  
11 ARMS  
The IGBT technology is the key to Vishay´s HPP advanced  
line of IMS (Insulated Metal Substrate) power modules.  
These modules are more efficient than comparable bipolar  
transistor modules, while at the same time having the simpler  
gate-drive requirements of the familiar power MOSFET. This  
superior technology has now been coupled to a state of the  
art materials system that maximizes power throughput with  
low thermal resistance. This package is highly suited to  
motor drive applications and where space is at a premium.  
TJ  
125 °C  
360 Vdc  
0.8  
Supply voltage  
Power factor  
Modulation depth (see fig. 1)  
115 %  
VCE(on) (typical)  
at IC = 13 A, 25 °C  
1.8 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
UNITS  
Collector to emitter voltage  
VCES  
600  
V
TC = 25 °C  
24  
Continuous collector current  
IC  
TC = 100 °C  
TC = 100 °C  
13  
A
(1)  
Pulsed collector current  
Clamped inductive load current  
Short circuit withstand time  
Gate to emitter voltage  
Isolation voltage  
ICM  
48  
(2)  
ILM  
48  
tSC  
VGE  
9.3  
µs  
V
20  
2500  
VISOL  
t = 1 min, any terminal to case  
TC = 25 °C  
VRMS  
63  
Maximum power dissipation, each IGBT  
PD  
W
TC = 100 °C  
25  
Operating junction and storage temperature range  
Soldering temperature  
TJ, TStg  
- 55 to + 150  
300  
°C  
For 10 s, (0.063" (1.6 mm) from case)  
6-32 or M3 screw  
5 to 7  
(0.55 to 0.8)  
lbf in  
(N m)  
Mounting torque  
Notes  
(1)  
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)  
VCC = 80 % (VCES), VGE = 20 V, L = 10 µH, RG = 10 Ω (see fig. 19)  
(2)  
Document Number: 94488  
Revision: 01-Sep-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

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