Datasheet > 晶体管 > IGBT> CPV364M4U

CPV364M4U

更新时间： 2024-11-17 22:28:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
10页	275K
描述
IGBT SIP MODULE

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中文翻译

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数据手册

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CPV364M4U 数据手册

PD- 5041

CPV364M4U

PRELIMINARY

IGBT SIP MODULE

Features

UltraFast IGBT

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

D 1

D 3

D 4

D 5

D 6

Q 1

Q 2

Q 3

Q 4

Q 5

Q 6

1 5

1 0

1 6

D 2

1 2

1 8

Product Summary

Output Current in a Typical 20 kHz Motor Drive

1 3

1 9

12 A_RMSper phase (3.5 kW total) with T_C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 115% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

IMS-2

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

600

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

9.3

I_FM

V_GE

±20

V_RMS

V_ISOL

Isolation Voltage, any terminal to case, 1 minute

Maximum Power Dissipation, each IGBT

2500

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation, each IGBT

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

2.0

3.0

Units

°C/W

g (oz)

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink, flat, greased surface

_θJC(DIODE)

_θCS(MODULE)

–––

0.10

–––

Weight of module

20 (0.7)

1/21/97

12 3 4 5 6 7...10

中文翻译

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与CPV364M4U相关器件

型号	品牌	获取价格	描述	数据表
CPV364M4UPBF	VISHAY	获取价格	IGBT SIP Module (Ultrafast IGBT)
CPV364MF	INFINEON	获取价格	IGBT SIP MODULE Fast IGBT
CPV364MK	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
CPV364MM	INFINEON	获取价格	Short Circuit Rated Fast IGBT
CPV364MU	INFINEON	获取价格	IGBT SIP MODULE Ultra-Fast IGBT
CP-V413PS	PULSE	获取价格	SPLITTER VDSL ADSL FLUSHMOUNT
CPV-E10-1S-6P	FERROXCUBE	获取价格	CPV-E20/10/5-1S-6P
CPV-E13-1S-10P-Z	FERROXCUBE	获取价格	CPV-E25-1S-10P-Z
CPV-E20	FERROXCUBE	获取价格	Dimensions for product: E20/10/5
CPV-E20-105-1S-6P	FERROXCUBE	获取价格	Dimensions for product: E20/10/5

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