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CPV364M4U

更新时间: 2024-10-31 22:28:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
10页 275K
描述
IGBT SIP MODULE

CPV364M4U 数据手册

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PD- 5041  
CPV364M4U  
PRELIMINARY  
IGBT SIP MODULE  
Features  
UltraFast IGBT  
1
• Fully isolated printed circuit board mount package  
• Switching-loss rating includes all "tail" losses  
• HEXFREDTM soft ultrafast diodes  
• Optimized for high operating frequency (over 5kHz)  
See Fig. 1 for Current vs. Frequency curve  
D 1  
D 3  
D 4  
D 5  
D 6  
Q 1  
Q 2  
Q 3  
Q 4  
Q 5  
Q 6  
3
6
9
4
1 5  
1 0  
1 6  
D 2  
1 2  
1 8  
Product Summary  
Output Current in a Typical 20 kHz Motor Drive  
7
1 3  
1 9  
12 ARMS per phase (3.5 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,  
Power Factor 0.8, Modulation Depth 115% (See Figure 1)  
Description  
The IGBT technology is the key to International Rectifier's advanced line of  
IMS (Insulated Metal Substrate) Power Modules. These modules are more  
efficient than comparable bipolar transistor modules, while at the same time  
having the simpler gate-drive requirements of the familiar power MOSFET.  
This superior technology has now been coupled to a state of the art materials  
system that maximizes power throughput with low thermal resistance. This  
package is highly suited to motor drive applications and where space is at a  
premium.  
IMS-2  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
600  
V
IC @ TC = 25°C  
Continuous Collector Current, each IGBT  
Continuous Collector Current, each IGBT  
Pulsed Collector Current   
20  
IC @ TC = 100°C  
10  
60  
ICM  
A
ILM  
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
60  
IF @ TC = 100°C  
9.3  
IFM  
60  
VGE  
±20  
V
VRMS  
W
VISOL  
Isolation Voltage, any terminal to case, 1 minute  
Maximum Power Dissipation, each IGBT  
2500  
63  
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation, each IGBT  
25  
TJ  
Operating Junction and  
-40 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
5-7 lbf•in (0.55-0.8 N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
2.0  
3.0  
Units  
°C/W  
g (oz)  
R
R
R
θJC (IGBT)  
Junction-to-Case, each IGBT, one IGBT in conduction  
Junction-to-Case, each diode, one diode in conduction  
Case-to-Sink, flat, greased surface  
θJC (DIODE)  
θCS (MODULE)  
–––  
0.10  
–––  
–––  
Wt  
Weight of module  
20 (0.7)  
1/21/97  

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