PD- 5041
CPV364M4U
PRELIMINARY
IGBT SIP MODULE
Features
UltraFast IGBT
1
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
D 1
D 3
D 4
D 5
D 6
Q 1
Q 2
Q 3
Q 4
Q 5
Q 6
3
6
9
4
1 5
1 0
1 6
D 2
1 2
1 8
Product Summary
Output Current in a Typical 20 kHz Motor Drive
7
1 3
1 9
12 ARMS per phase (3.5 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
20
IC @ TC = 100°C
10
60
ICM
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
60
IF @ TC = 100°C
9.3
IFM
60
VGE
±20
V
VRMS
W
VISOL
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
2500
63
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
25
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
2.0
3.0
Units
°C/W
g (oz)
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
θJC (DIODE)
θCS (MODULE)
–––
0.10
–––
–––
Wt
Weight of module
20 (0.7)
1/21/97