Datasheet > 晶体管 > IGBT> CPV363M4K

CPV363M4K

更新时间： 2024-11-17 22:28:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制双极性晶体管栅局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	178K
描述
IGBT SIP MODULE

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中文翻译

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数据手册

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CPV363M4K 数据手册

PD-5.043A

CPV363M4K

Short Circuit Rated UltraFast IGBT

IGBT SIP MODULE

Features

• Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit

Rated to 10µs @ 125°C, V_GE= 15V

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

D 1

D 2

D 3

D 4

D 5

D 6

Q 1

Q 2

Q 3

Q 4

Q 5

Q 6

1 5

1 0

1 6

1 2

1 8

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

Product Summary

1 3

1 9

Output Current in a Typical 20 kHz Motor Drive

6.7 A_RMSper phase (1.94 kW total) with T_C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 115% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

IMS-2

Units

Absolute Maximum Ratings

Parameter

Max.

V_CES

Collector-to-Emitter Voltage

600

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

I_C@ T_C= 100°C

6.0

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

I_F@ T_C= 100°C

6.1

I_FM

t_sc

µs

V_GE

Gate-to-Emitter Voltage

± 20

V_ISOL

Isolation Voltage, any terminal to case, 1 minute

Maximum Power Dissipation, each IGBT

Operating Junction and

2500

V_RMS

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

-40 to +150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55 - 0.8 N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.5

5.5

Units

°C/W

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink, flat, greased surface

_θJC(DIODE)

_θCS(MODULE)

–––

0.1

–––

Weight of module

20 (0.7)

g (oz)

2/24/98

12 3 4 5 6 7...10

中文翻译

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与CPV363M4K相关器件

型号	品牌	获取价格	描述	数据表
CPV363M4KPBF	VISHAY	获取价格	IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
CPV363M4U	INFINEON	获取价格	IGBT SIP MODULE
CPV363M4UPBF	VISHAY	获取价格	IGBT SIP Module (Ultrafast IGBT)
CPV363MF	INFINEON	获取价格	IGBT SIP MODULE Fast IGBT
CPV363MFPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, IMS-2, 13 PIN
CPV363MK	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
CPV363MM	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated Fast IGBT
CPV363MU	INFINEON	获取价格	IGBT SIP MODULE Ultra-Fast IGBT
CPV363MUPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel
CPV364M4F	INFINEON	获取价格	IGBT SIP MODULE

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