Datasheet > 晶体管 > IGBT> CPV362MF

CPV362MF

更新时间： 2024-11-17 22:28:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
8页	423K
描述
IGBT SIP MODULE Fast IGBT

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PD - 5.026

CPV362MF

IGBT SIP MODULE

Fast IGBT

Features

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency (1 to 10kHz)

See Fig. 1 for Current vs. Frequency curve

Product Summary

Output Current in a Typical 5.0 kHz Motor Drive

4.6 A_RMSper phase (1.4 kW total) with T_C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

600

Units

V_CES

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

8.8

I_C@ T_C= 100°C

4.8

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

3.4

I_FM

V_GE

±20

V_RMS

V_ISOL

Isolation Voltage, any terminal to case, 1 min.

Maximum Power Dissipation, each IGBT

2500

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation, each IGBT

9.1

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance

Parameter

Typ.

—

Max.

Units

°C/W

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink, flat, greased surface

5.5

9.0

—

_θJC(DIODE)

_θCS(MODULE)

—

0.1

Weight of module

20 (0.7)

—

g (oz)

Revision 1

C-141

To Order

12 3 4 5 6 7 8

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与CPV362MF相关器件

型号	品牌	获取价格	描述	数据表
CPV362MK	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
CPV362MM	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated Fast IGBT
CPV362MU	INFINEON	获取价格	IGBT SIP MODULE Ultra-Fast IGBT
CPV362MUPBF	INFINEON	获取价格	暂无描述
CPV363	INFINEON	获取价格	IGBT SIP MODULE Fast IGBT
CPV363M4F	INFINEON	获取价格	IGBT SIP MODULE
CPV363M4FPBF	VISHAY	获取价格	暂无描述
CPV363M4K	INFINEON	获取价格	IGBT SIP MODULE
CPV363M4KPBF	VISHAY	获取价格	IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
CPV363M4U	INFINEON	获取价格	IGBT SIP MODULE

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