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CPV363M4F

更新时间： 2024-11-17 22:28:43
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
10页 270K
描述
IGBT SIP MODULE

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中文翻译

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CPV363M4F 数据手册

 浏览型号CPV363M4F的Datasheet PDF文件第2页浏览型号CPV363M4F的Datasheet PDF文件第3页浏览型号CPV363M4F的Datasheet PDF文件第4页浏览型号CPV363M4F的Datasheet PDF文件第5页浏览型号CPV363M4F的Datasheet PDF文件第6页浏览型号CPV363M4F的Datasheet PDF文件第7页 
PD -5038  
CPV363M4F  
PRELIMINARY  
IGBT SIP MODULE  
Fast IGBT  
1
Features  
• Fully isolated printed circuit board mount package  
• Switching-loss rating includes all "tail" losses  
• HEXFREDTM soft ultrafast diodes  
• Optimized for medium operating (1 to 10 kHz)  
See Fig. 1 for Current vs. Frequency curve  
D 1  
D 3  
D 5  
D 6  
Q 1  
Q 2  
Q 3  
Q 4  
Q 5  
Q 6  
3
6
9
4
1 5  
1 0  
1 6  
D 2  
D 4  
1 2  
1 8  
Product Summary  
Output Current in a Typical 5.0 kHz Motor Drive  
7
1 3  
1 9  
11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,  
Power Factor 0.8, Modulation Depth 115% (See Figure 1)  
Description  
The IGBT technology is the key to International Rectifier's advanced line of  
IMS (Insulated Metal Substrate) Power Modules. These modules are more  
efficient than comparable bipolar transistor modules, while at the same time  
having the simpler gate-drive requirements of the familiar power MOSFET.  
This superior technology has now been coupled to a state of the art materials  
system that maximizes power throughput with low thermal resistance. This  
package is highly suited to motor drive applications and where space is at a  
premium.  
IMS-2  
Absolute Maximum Ratings  
Parameter  
Collector-to-Emitter Voltage  
Max.  
600  
16  
Units  
V
VCES  
IC @ TC = 25°C  
Continuous Collector Current, each IGBT  
Continuous Collector Current, each IGBT  
Pulsed Collector Current   
IC @ TC = 100°C  
8.7  
ICM  
50  
A
ILM  
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
50  
IF @ TC = 100°C  
6.1  
IFM  
50  
VGE  
±20  
2500  
36  
V
VRMS  
W
VISOL  
Isolation Voltage, any terminal to case, 1 minute  
Maximum Power Dissipation, each IGBT  
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation, each IGBT  
14  
TJ  
Operating Junction and  
-40 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
5-7 lbf•in (0.55-0.8 N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
3.5  
5.5  
Units  
°C/W  
g (oz)  
R
R
R
θJC (IGBT)  
Junction-to-Case, each IGBT, one IGBT in conduction  
Junction-to-Case, each diode, one diode in conduction  
Case-to-Sink, flat, greased surface  
θJC (DIODE)  
θCS (MODULE)  
–––  
0.10  
–––  
–––  
Wt  
Weight of module  
20 (0.7)  
1/21/97  
1234567...10

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