CPV362M4FPBF

更新时间： 2024-11-20 13:07:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管电动机控制双极性晶体管栅局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	283K
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CPV362M4FPBF 数据手册

PD -5.046

CPV362M4F

IGBT SIP MODULE

Fast IGBT

Features

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating (1 to 10 kHz)

See Fig. 1 for Current vs. Frequency curve

D 1

D 3

D 5

D 6

Q 1

Q 2

Q 3

Q 4

Q 5

Q 6

1 5

1 0

1 6

D 2

D 4

1 2

1 8

Product Summary

Output Current in a Typical 5.0 kHz Motor Drive

1 3

1 9

11 A_RMSper phase (3.1 kW total) with T_C= 90°C, T_J= 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 115% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

IMS-2

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

600

Units

V_CES

I_C@ T_C= 25°C

Continuous Collector Current, each IGBT

Pulsed Collector Current

8.8

I_C@ T_C= 100°C

4.8

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

3.4

I_FM

V_GE

±20

V_RMS

V_ISOL

Isolation Voltage, any terminal to case, 1 minute

Maximum Power Dissipation, each IGBT

Operating Junction and

2500

P_D@ T_C= 25°C

P_D@ T_C= 100°C

9.1

T_J

-40 to +150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw

300 (0.063 in. (1.6mm) from case)

5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

5.5

9.0

Units

°C/W

_θJC(IGBT)

Junction-to-Case, each IGBT, one IGBT in conduction

Junction-to-Case, each diode, one diode in conduction

Case-to-Sink, flat, greased surface

_θJC(DIODE)

_θCS(MODULE)

–––

0.1

–––

Weight of module

20 (0.7)

g (oz)

9/16/97

12 3 4 5 6 7...10

中文翻译

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与CPV362M4FPBF相关器件

型号	品牌	获取价格	描述	数据表
CPV362M4K	INFINEON	获取价格	Short Circuit Rated UltraFast IGBT
CPV362M4U	INFINEON	获取价格	UltraFast IGBT IGBT SIP MODULE
CPV362M4UPBF	VISHAY	获取价格	IGBT SIP Module (Fast IGBT)
CPV362MF	INFINEON	获取价格	IGBT SIP MODULE Fast IGBT
CPV362MK	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
CPV362MM	INFINEON	获取价格	IGBT SIP MODULE Short Circuit Rated Fast IGBT
CPV362MU	INFINEON	获取价格	IGBT SIP MODULE Ultra-Fast IGBT
CPV362MUPBF	INFINEON	获取价格	暂无描述
CPV363	INFINEON	获取价格	IGBT SIP MODULE Fast IGBT
CPV363M4F	INFINEON	获取价格	IGBT SIP MODULE

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