生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
针数: | 5 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 2 A |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 0.145 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G5 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.9 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CPH5824 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
CPH5826 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
CPH5831 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
CPH5835 | SANYO |
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CPH5835 | |
CPH5835_07 | SANYO |
获取价格 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
CPH5838 | SANYO |
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General-Purpose Switching Device Applications | |
CPH5839 | SANYO |
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General-Purpose Switching Device Applications | |
CPH5846 | SANYO |
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MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
CPH5847 | SANYO |
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MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
CPH5848 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),SOT-25 |